Abstract:Amorphous indium-gallium-zinc oxide (a-IGZO) has become a standard channel ingredient of switching/driving transistors in active-matrix organic light-emitting diode (AMOLED) televisions. However, mobile AMOLED displays with a high pixel density (≥500 pixels per inch) and good form factor do not often employ a-IGZO transistors due to their modest mobility (10-20 cm2/(V s)). Hybrid low-temperature polycrystalline silicon and oxide transistor (LTPO) technology is being adapted in high-end mobile AMOLED devices due to its ultralow power consumption and excellent current drivability. The critical issues of LTPO (including a complicated structure and high fabrication costs) require a search for alternative all-oxide thin-film transistors (TFTs) with low-cost processability and simple device architecture. The atomic layer deposition (ALD) method is a promising route for high-performance all-oxide TFTs due to its unique features, such as in situ cation composition tailoring ability, precise nanoscale thickness controllability, and excellent step coverage. Here, we report an in-depth comparative investigation of TFTs with indium-gallium oxide (IGO)/gallium-zinc oxide (GZO) and indium-zinc oxide (IZO)/GZO heterojunction stacks using an ALD method. IGO and IZO layers with different compositions were tested as a confinement layer (CL), whereas the GZO layer was used as a barrier layer (BL). Optimal IGO/GZO and IZO/GZO channels were carefully designed on the basis of their energy band properties, where the formation of a quasi-two-dimensional electron gas (q2DEG) near the CL/BL interface is realized by rational design of the band gaps and work-functions of the IGO, IZO, and GZO thin films. To verify the effect of q2DEG formation, the device performances and stabilities of TFTs with CL/BL oxide heterojunction stacks were examined and compared to those of TFTs with a single CL layer. The optimized device with the In0.75Zn0.25O/Ga0.80Zn0.20O stack showed remarkable electrical performance: μFE of 76.7 ± 0.51 cm2/(V s), VTH of -0.37 ± 0.19 V, SS of 0.13 ± 0.01 V/dec, and ION/OFF of 2.5 × 1010 with low operation voltage range of ≥2 V and excellent stabilities (ΔVTH of +0.35, -0.67, and +0.08 V for PBTS, NBIS, and CCS, respectively). This study suggests the feasibility of using high-performance ALD-derived oxide TFTs (which can compete with the performance of LTPO transistors) for high-end mobile AMOLED displays.

The Role of Dual-Stacked Oxide Semiconductor in High Performance Thin Film Transistors

Highly robust oxide TFT with bulk accumulation and source/drain/active layer splitting

High-performance IGZO-based TFTs with Stacked Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Dielectrics

Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors

High-Performance Indium-Gallium-Zinc-Oxide Thin-Film Transistors with Stacked Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Dielectrics

15.2: Invited Paper: Atomic Layer Deposited Oxide Semiconductor Enabling High Mobility and Low Driving Voltage in TFTs

Oxide TFT with multilayer gate insulator for backplane of AMOLED device

Improvement of the Performance and Stability of Oxide Semiconductor Thin-Film Transistors Using Double-Stacked Active Layers

Comparative Study of Atomic Layer Deposited Indium-Based Oxide Transistors with a Fermi Energy Level-Engineered Heterojunction Structure Channel through a Cation Combinatorial Approach

Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor

P‐19: High Mobility and Reliability Oxide Stacked TFT for Application to Next Generation Display

35‐4: High‐Mobility and High‐Negative Bias Illumination Stress Stability Based on ITZO/IGZO Bilayer Thin Film Transistors

A dual function metal oxide interlayer as an oxygen-defect inhibitor and a gate-leakage suppressor for a hysteresis-free, solution-processed top-gated IGZO TFT

Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric

Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors

Nitrogen-doped Amorphous Oxide Semiconductor Thin Film Transistors with Double-Stacked Channel Layers

High mobility of IGO/IGZO double-channel thin-film transistors by atomic layer deposition

Improved Performance and Bias Stability of Al2O3/IZO Thin-Film Transistors with Vertical Diffusion

Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs with Atomic Layer Deposited Al2O3/SiO2Stacked Insulators

Oxide-Semiconductor-Based TFTs for Displays and Flexible Electronics

Effect of high conductivity amorphous InGaZnO active layer on the field effect mobility improvement of thin film transistors