High‐Performance Back‐Channel‐Etched Thin‐Film Transistors with an InGaO/InZnO Stacked Channel

Mingjie Zhao,Zewang Zhang,Yingchao Xu,Daisheng Xu,Jiyan Zhang,Zhangchao Huang

DOI: https://doi.org/10.1002/pssa.201900773

2020-01-24

physica status solidi (a)

Abstract:<p>Back‐channel‐etched (BCE) thin‐film transistors (TFTs) with an InGaO/InZnO stacked channel are developed, in which the InGaO and InZnO provide a highly acid resistant backchannel and a high‐mobility front channel, respectively. The electrical performance of the TFT is optimized by adjusting the InGaO thickness. The best performance was achieved for the TFT with 10 nm‐thick InGaO. A thinner InGaO layer leads to inferior performance due to damage during the BCE process, while a thicker InGaO layer results in a hump effect and significant negative shifts in the threshold voltage (<i>V</i>_th) and turn‐on voltage (<i>V</i>_on), which should be ascribed to the large total carrier number in the channel. The optimal TFT exhibits a high saturated field‐effect mobility of 28.9 cm²V⁻¹s⁻¹, a near‐zero <i>V</i>_th of −0.17 V, a <i>V</i>_on of −0.49 V, a low subthreshold swing of 0.12 Vdec⁻¹, a high on‐to‐off current ratio of 3.5×10⁹, and a low contact resistance between the S/D electrodes and channel. The TFT also exhibits high stability under bias thermal stress.</p><p>This article is protected by copyright. All rights reserved.</p>