Nb Doped TiO2Protected Back-Channel-Etched Amorphous InGaZnO Thin Film Transistors

Letao Zhang,Xiaoliang Zhou,Huan Yang,Hongyu He,Longyan Wang,Min Zhang,Shengdong Zhang

DOI: https://doi.org/10.1109/led.2016.2644657

IF: 4.8157

2017-01-01

IEEE Electron Device Letters

Abstract:A new back-channel-etched process for the fabrication of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) is demonstrated, in which a conductive Nb doped TiO 2 (TNO) thin film is used to serve as protective layer for the a-IGZO active layer. It is shown that the TNO film provides the active layer with excellent protection even when the thickness is only 1 nm. With treatment by N 2 O plasma +200°C annealing, the conductive TNO can be converted into an insulator to serve as an in situ passivation layer. Besides, by the introduction of the TNO layer, the source-drain parasitic resistance of the BCE process fabricated TFTs is significantly reduced and the positive bias stress stability is improved as well.