P‐9: Parylene / Al2O3 Double Layer Passivated Amorphous InGaZnO Thin‐Film Transistors

Xiaoliang Zhou,Gang Wang,Yang Shao,Letao Zhang,Huiling Lu,Shuming Chen,Dedong Han,Yi Wang,Shengdong Zhang

DOI: https://doi.org/10.1002/sdtp.11858

2017-01-01

Abstract:Amorphous InGaZnO thin‐film transistors (a‐IGZO TFTs) passivated by parylene / Al 2 O 3 double layer are fabricated. The parylene layer prevents the channel layer from ion bombardment during Al 2 O 3 sputtering. Al 2 O 3 blocks O 2 and water effectively. It is shown that a‐IGZO TFTs with the proposed passivation are stable in the ambient atmosphere.