Abstract:During the fabrication of an indium-gallium-zinc oxide (IGZO) thin film transistor (TFT), the thermal process was used to reduce the resistivity of IGZO. The annealing temperature was found to have great influence on the transistor characteristics. At an optimized heat-treatment temperature, the depletion-mode IGZO TFT was fabricated with steeper subthreshold slope, higher filed-effect mobility and acceptable turn-on voltage. And the relatively conductive IGZO could directly replace the indium tin oxide as the transparent electrode of the organic light-emitting diode (OLED), reducing the mask count of the backplane for the active-matrix OLED display. INTRODUCTION Thin film transistor (TFT) based on metal oxide (MO), especially, indium-gallium-zinc oxide (IGZO), is considered as a good candidate to fabricate large area backplane for active-matrix organic light-emitting diode (AMOLED) display, due to its high mobility, good uniformity and low off-state current [1]. Our previous study [2] suggested that the resistivity (ρ) of IGZO highly depended on the heat-treatment conditions, such as annealing ambience, temperature, duration and gas permeability of IGZO cover, while the thermal process was often inevitable during the fabrication of IGZO TFT. With the active layer of IGZO covered with the gas-permeable silicon oxide (SiOx), the TFT was subjected to a serious anneals in an oxygen-deficient nitrogen (N2) ambience. With the increasing temperature, although the mobility was enhanced, the turn-on voltage (Von) became more and more negative. At an optimized temperature, the depletion-mode (DM) IGZO TFT with steeper subthreshold slope, higher filed-effect mobility and acceptable turn-on voltage was fabricated. Furthermore, such annealing-induced conductive IGZO source/drain regions can be directly used to replace the indium tin oxide (ITO) as the transparent electrode of OLED, reducing the mask count of AMOLED backplane. Annealing-Induced DM IGZO TFT Shown in Figure 1 is the evolution of the schematic cross-section of an IGZO TFT. A gate dielectric of 100 nm silicon oxide (SiOx) was first thermally grown on an n+ silicon substrate, which served as the gate electrode. 10 or 20 nm IGZO film was then room-temperature sputtered using a target of In2O3:Ga2O3:ZnO = 1:1:1 mol% in an atmosphere of 10% oxygen (O2) and 90% argon (Ar). After the patterning of the active-island using the hydrofluoric acid, a passivation layer of 300 nm SiOx was deposited at 300 oC in a plasma-enhanced chemical vapor deposition (PECVD) reactor. The tetraethylorthosilicate (TEOS) and O2 were used as the source gases. The contact holes were then opened and the resulting structure was subjected to a series of anneals, as shown in Figure 1a. Finally, 300 nm aluminum (Al) was deposited and patterned into electrodes (Fig. 1b). These TFTs were measured using an Agilent 4156C semiconductor parameter analyzer. n+ Si 100nm SiOx 300nm SiOx

The Fabrication of Indium–Gallium–Zinc Oxide Sputtering Targets with Various Gallium Contents and Their Applications to Top-Gate Thin-Film Transistors

Fabrication and performance of indium oxide based transparent thin film transistors

Achieving High Performance Thin Film Transistors Based on Gallium Doped Indium Zinc Tin Oxide

Self-aligned Top-Gate InGaZnO Thin Film Transistors Using SiO2/Al2O3 Stack Gate Dielectric

Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns

Indium–Gallium–Zinc–Oxide Thin-Film Transistors Based on Homojunctioned Structure Fabricated with a Self-Aligned Process

Self-aligned Indium–gallium–zinc Oxide Thin-Film Transistors with SiNx/SiO2/SiNx/SiO2 Passivation Layers

Top-Gate Amorphous Indium-Gallium-Zinc-OxideThin-Film Transistors With Magnesium Metallized Source/Drain Regions

Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition

Tuning the electrical performance of metal oxide thin-film transistors via dielectric interface trap passivation and graded channel modulation doping

Fabrication of Transparent Indium Zinc Oxide Thin Film Transistors by Sol-gel Technology

Amorphous indium–gallium–zinc–oxide thin-film transistors using organic–inorganic hybrid films deposited by low-temperature plasma-enhanced chemical vapor deposition for all dielectric layers

Sputtered oxides used for passivation layers of amorphous InGaZnO thin film transistors

Transparent Amorphous Indium-Gallium-Zinc-Oxygen Thin Film Transistors Using Solution Technology at Low Temperature

High-Performance Thin-Film Transistors with Sputtered IGZO/Ga₂O₃ Heterojunction

Thin Film Transistor Using Amorphous InGaZnO Films as Both Channel and Source/Drain Electrodes

Rational Design of Different Ga Content Bilayer InGaZnO Thin-Film Transistors With Al2O3/HfO2 Passivation Layer

Annealing-Induced Depletion-Mode Indium-Gallium-Zinc Oxide Thin-Film Transistor and Its Application to Active-Matrix Organic Light-Emitting Diode Display

High-Performance Dual-Layer Channel Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated In Different Oxygen Contents At Low Temperature

Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition

High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal–Organic Decomposition Method