Improvement of Performance of Back Channel Etching InGaZnO Thin-Film Transistors by CF₄ Plasma Treatment

Longlong Chen

DOI: https://doi.org/10.1109/TED.2023.3244903

IF: 3.1

2023-01-01

IEEE Transactions on Electron Devices

Abstract:The performance of back channel etching (BCE) amorphous indium gallium zinc oxide (a-IGZO) thinfilm transistors (TFTs) was improved using a carbon tetrafluoride (CF4) plasma treatment of the back channel (BC) after the wet-etching process of source-drain (SD) electrodes. X-ray photoelectron spectroscopy (XPS) analysis showed that the wet-etching of H2O2-based etchant may result in Mo-related residue, which deteriorate a-IGZO BC. In comparison with as-etching indium gallium zinc oxide (IGZO) TFT, the saturation field effect mobility increases from 7.8 to 16.4 cm2/Vs, subthreshold swing (SS) decreases from 0.82 to 0.34 V/decade, the ratio of on current and off current improves from 7.3 x 10(5 )to 1.1 x 10(10), and the threshold voltage shift of negative bias illumination stability (NBIS) improves from -3.4 to -0.6 V. The fact confirmed that CF4 plasma treatment of the BC can effectively reduce BC defects and improve the electrical characteristics of BCE IGZO TFT comprehensively.