Abstract:Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) have attracted considerable attention for cutting-edge and next-generation electronics applications because of their high field-effect mobility, low leakage current, superior uniformity, and high transparency. On the other hand, maintaining stable electrical performance under the influences of various ambient effects and complex operating environments is a serious application problem. Hence, a fluoroacrylate-incorporated polytetrafluoroethylene (F–P) is proposed as a new material for passivation layers (PVLs) of a-IGZO TFTs. Solution process-based F–P PVLs were introduced to overcome the intrinsically brittle nature of inorganic materials and enhance the long-term stability of organic materials because of their excellent flexibility, hydrophobic, and chemical stability. This also provides a simple and cheaper alternative for practical applications. The F–P PVLs with different concentrations exhibited appropriate improvements in stability and electrical performance. Of these, the 1.0 wt. % F–P passivated IGZO TFTs showed improved performance in saturation mobility ( μ sat ) from 6.23 ± 0.21 to 7.02 ± 0.38 cm 2 /Vs, an on-off current ratio ( I on / I off ) from (4.05 ± 0.84) × 10 5 to (3.75 ± 2.32) × 10 8 , and a subthreshold swing ( SS ) from 1.79 ± 0.30 to 0.41 ± 0.04 V/decade compared to the pristine device without the F–P PVL. After the 15-day stability test via ambient effects, μsat increased from 7.02 ± 0.38 to ~8 cm 2 /Vs; I on / I off increased from (3.75 ± 2.32) × 10 8 to ~10 10 and the SS values were maintained at a low level (≤ 0.6 V/dec.). The improvement was induced by lower surface energy and better hydrophobicity from F–P PVLs, which can effectively reduce the adsorption behavior of H 2 O and O 2 . With a lower oxygen-related interface trap density, the electrical performances were improved by a suitable concentration-based F–P PVL. In addition, the F–P PVL can provide a long-term guarantee of stability and reliability for a-IGZO TFTs, which will have potential applications for wearable devices and multi-environment electronics devices.

Enhanced Operation of Back-Channel-Etched a-IGZO TFTs by Fluorine Treatment during Source/Drain Wet-Etching

Improvement of Performance of Back Channel Etching InGaZnO Thin-Film Transistors by CF4 Plasma Treatment

Improvement of Performance of Back Channel Etching InGaZnO Thin-Film Transistors by CF 4 Plasma Treatment

Impact of Wet Etchant with Different PH Value on the Performance of Back-Channel-etch A-Igzo Thin-Film-transistor

Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium–Gallium–Zinc Thin-Film-Transistors by CF 4 +O 2 Plasma Treatment

Effects of Over-Etching Time on the Characteristics of Amorphous IGZO Thin-Film Transistors with Back-Channel-etch Structure

Effects of Etching Residue on Positive Shift of Threshold Voltage in Amorphous Indium–Zinc-Oxide Thin-Film Transistors Based on Back-Channel-Etch Structure

P-15: AZO Etch Buffer Layer Based Back-Channel-Etch A-Igzo TFT Technology

Damage-Free Back Channel Wet-Etch Process in Amorphous Indium-Zinc-Oxide Thin-Film Transistors Using A Carbon-Nanofilm Barrier Layer

Enhanced Reliability of A-Igzo TFTs with a Reduced Feature Size and a Clean Etch-Stopper Layer Structure

Enhancement of A-Igzo TFT Device Performance Using a Clean Interface Process Via Etch-Stopper Nano-layers

Performance Improvement of Back-Channel-Etched A-Igzo TFTs by O2 Plasma Treatment

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs.

Performance Improvement of Excimer Laser Annealed Poly-Si TFTs Using Fluorine Ion Implantation

Improvement of the electrical properties of amorphous indium-gallium-zinc oxide thin-film transistors by cross-linked CYTOP passivation

Surface Passivation Engineering Approach to Fluoroacrylate-Incorporated Polytetrafluoroethylene for Highly Reliable a-IGZO TFTs

Performance Enhancement of InGaZnO Top-Gate Thin Film Transistor With Low-Temperature High-Pressure Fluorine Treatment

Suppression of the Short-Channel Effect in Dehydrogenated Elevated-Metal Metal- Oxide (EMMO) Thin-Film Transistors

High Performance Indium-Zinc-Oxide Thin-Film Transistors Fabricated with A Back-Channel-Etch-Technique

Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment