Abstract:Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) have attracted considerable attention for cutting-edge and next-generation electronics applications because of their high field-effect mobility, low leakage current, superior uniformity, and high transparency. On the other hand, maintaining stable electrical performance under the influences of various ambient effects and complex operating environments is a serious application problem. Hence, a fluoroacrylate-incorporated polytetrafluoroethylene (F–P) is proposed as a new material for passivation layers (PVLs) of a-IGZO TFTs. Solution process-based F–P PVLs were introduced to overcome the intrinsically brittle nature of inorganic materials and enhance the long-term stability of organic materials because of their excellent flexibility, hydrophobic, and chemical stability. This also provides a simple and cheaper alternative for practical applications. The F–P PVLs with different concentrations exhibited appropriate improvements in stability and electrical performance. Of these, the 1.0 wt. % F–P passivated IGZO TFTs showed improved performance in saturation mobility ( μ sat ) from 6.23 ± 0.21 to 7.02 ± 0.38 cm 2 /Vs, an on-off current ratio ( I on / I off ) from (4.05 ± 0.84) × 10 5 to (3.75 ± 2.32) × 10 8 , and a subthreshold swing ( SS ) from 1.79 ± 0.30 to 0.41 ± 0.04 V/decade compared to the pristine device without the F–P PVL. After the 15-day stability test via ambient effects, μsat increased from 7.02 ± 0.38 to ~8 cm 2 /Vs; I on / I off increased from (3.75 ± 2.32) × 10 8 to ~10 10 and the SS values were maintained at a low level (≤ 0.6 V/dec.). The improvement was induced by lower surface energy and better hydrophobicity from F–P PVLs, which can effectively reduce the adsorption behavior of H 2 O and O 2 . With a lower oxygen-related interface trap density, the electrical performances were improved by a suitable concentration-based F–P PVL. In addition, the F–P PVL can provide a long-term guarantee of stability and reliability for a-IGZO TFTs, which will have potential applications for wearable devices and multi-environment electronics devices.

Improvement of the electrical properties of amorphous indium-gallium-zinc oxide thin-film transistors by cross-linked CYTOP passivation

Surface Passivation Engineering Approach to Fluoroacrylate-Incorporated Polytetrafluoroethylene for Highly Reliable a-IGZO TFTs

Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array

Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process

Effect of high conductivity amorphous InGaZnO active layer on the field effect mobility improvement of thin film transistors

Enhanced performances of a-IGZO TFTs with oxide passivation layers fabricated by hollow cathode assisted PLD

Improved Field-Effect Mobility of In–Ga–Zn–O TFTs by Oxidized Metal Layer

Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors

Improvement of Electrical Characteristics and Stability of IGZO TFT Through Surface Single Crystallization of IGZO Film at Room Temperature

Thin Film Transistor Using Amorphous InGaZnO Films as Both Channel and Source/Drain Electrodes

Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition

Improvement in Device Performance of Vertical Thin-Film Transistors Using Atomic Layer Deposited IGZO Channel and Polyimide Spacer

Influence of metallization process on solution-processed InGaZnO thin film transistors

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs.

High Reliability Of Igzo Tfts Using Low-Temperature Fabricated Organic Passivation Layers

Fluorination-mitigated High-Current Degradation of Amorphous InGaZnO Thin-Film Transistors

Improved mobility and bias stability of Hf-doped IGZO/IZO/Hf-doped IGZO thin-film transistor

High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation

Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance