Abstract:A new strategy based on atomic layer deposition and plasma fluorination is developed to fabricate high‐performance In2O3:F thin‐film transistors (TFTs) with remarkable bias‐stress stability. Density functional theory analysis reveals that the fluorine doping can stabilize the lattice oxygen and electrically passivate the VO defects in In2O3. The afforded In2O3:F TFTs are of high promise for the CMOS back‐end‐of‐line compatible applications. A low‐thermal‐budget fabrication approach is developed to realize high‐performance fluorine‐doped indium oxide (In2O3:F) thin‐film transistors (TFTs) with remarkable bias‐stress stability. The ultrathin transistor channel layer is prepared by a re‐developed atomic layer deposition (ALD) process of using cyclopentadienyl indium(I) (InCp) and O2 plasma to deposit a crystalline In2O3 film, followed by a new fluorine doping strategy to use CF4 plasma to afford the In2O3:F layer. As revealed by the density functional theory (DFT) analysis, the fluorine doping can stabilize the lattice oxygen and electrically passivate the problematic VO defects in In2O3 by forming the FOFi spectator defects. Therefore, the fabricated In2O3:F TFTs show simultaneously excellent electrical performance and remarkable bias‐stress stability, with high μFE of 35.9 cm2 V−1 s−1, positive Vth of 0.36 V, steep SS of 94.3 mV dec−1, small hysteresis of 33 mV, and small ΔVth of −111 and 49 mV under NBS and PBS, respectively. This work demonstrates the high promise of the fluorinated ALD In2O3:F TFTs for the CMOS back‐end‐of‐line (BEOL) compatible technologies toward advanced monolithic 3D integration.

Indium-zinc-tin-oxide thin-film-transistor reliability enhancement using fluoridation with CF 4 reactive sputtering

Remarkable Bias‐Stress Stability of Ultrathin Atomic‐Layer‐Deposited Indium Oxide Thin‐Film Transistors Enabled by Plasma Fluorination

Performance Enhancement of InGaZnO Top-Gate Thin Film Transistor With Low-Temperature High-Pressure Fluorine Treatment

Fluorine IMP effect on negative bias temperature instability and process induced defects

In-Situ Fluorine-Doped Znsno Thin Film and Thin-Film Transistor

Sol-gel Indium-Zinc-tin-oxide Thin Film Transistor Pixel Array with Superior Stabilityunder Negative Bias Illumination Stress

Simultaneous Enhancement of Electrical Performance and Negative Bias Illumination Stability for Low-Temperature Solution-Processed SnO2 Thin-Film Transistors by Fluorine Incorporation

A cost-effective fluorination method for enhancing the performance of metal oxide thin-film transistors

Amorphous InZnSnO thin-film-transistors performance enhancement with low-energy Xenon Pulsed-light annealing

Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process

Fluorinated Metal-Oxide Thin-Film Transistors for Circuit Implementation on a Flexible Substrate

Enhanced Bias Stress Stability of A-Ingazno Thin Film Transistors by Inserting an Ultra-Thin Interfacial InGaZnO:N Layer

Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium–Gallium–Zinc Thin-Film-Transistors by CF 4 +O 2 Plasma Treatment

P‐15: the Use of Fluorination to Enhance the Performance and the Reliability of Elevated‐Metal Metal‐Oxide Thin‐Film Transistors

Enhancing Reliability of Short-channel Dual gate InGaZnO Thin Film Transistors by Bottom-gate Oxide Engineering

Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations

High-mobility and high-reliability Zn-incorporated amorphous In2O3-based thin-film transistors

P‐18: Student Poster: Non‐Oxidizing Pre‐Annealing for Enhanced Fluorination of an Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor

P‐11: Carrier Concentration Reduction by Fluorine Doping in P‐Type SnO Thin‐Film Transistors

Enhanced Stability Performance of Transparent Ozone ALD ZnO Thin-Film Transistors with SiAlO X Dielectric

Improving Reliability of a-InGaZnO TFTs With Optimal Location of Al2O3 Passivation in Moist Environment