Abstract:The amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) are of great interest due to their high mobility, excellent homogeneity, and low processing temperature. With energy conservation and flexible electronics emerging, further reducing post-processing temperatures has become a primary concern. $\text{O}_{{2}}$ plasma treatment has received much attention because it can supply oxygen atoms directly and enhance the performance of AOS thin films at low temperatures. In this study, we provide a combined post-treatment incorporating low-temperature annealing and $\text{O}_{{2}}$ plasma treatment to improve the performance of praseodymium-doped indium zinc oxide (PrIZO) thin films and TFTs. With the increase of $\text{O}_{{2}}$ plasma treatment power, the density of PrIZO thin films first increases and then decreases, reaching a maximum of 6.3 $\text{g}\cdot $ cm $^{-{3}}$ at 40 W. With the increasing $\text{O}_{{2}}$ plasma treatment power, the surface roughness of PrIZO thin films first decreases and then increases, achieving a minimum of 0.49 nm at 40 W. The optimized PrIZO TFT exhibits good electric performance with a $\mu _{\text {sat}}$ of 17.9 cm $^{{2}} \cdot \text{V}^{-{1}} \cdot \text{s}^{-{1}}$ , a subthreshold swing (SS) of 0.40 $\text{V}\cdot $ dec $^{-1}$ , a threshold voltage ( ${V}_{\text {TH}}$ ) of −1.1 V, and an ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ ratio of 7.4 $\times \,\,10^{{7}}$ ultimately. A novel combined posttreatment incorporating low-temperature annealing and $\text{O}_{\mathbf {2}}$ plasma treatment is proposed and proved promising.

P‐11: Carrier Concentration Reduction by Fluorine Doping in P‐Type SnO Thin‐Film Transistors

High-Concentration F-Incorporated Zno Thin Films Doped Via Femtosecond-Laser Hyperdoping

Enhanced Performance of P-Type SnO X Thin Film Transistors Through Defect Compensation

Carrier Modulation and Effective Passivation of Tin Oxide Thin-Film Transistors by Organic Surface Doping

Magnetron-Sputtered SnO Thin Films for p-Type and Ambipolar TFT Applications

In-Situ Fluorine-Doped Znsno Thin Film and Thin-Film Transistor

A cost-effective fluorination method for enhancing the performance of metal oxide thin-film transistors

Performance Improvement of Low-Temperature Polycrystalline Silicon Thin-Film Transistors with Fluorinated Silicate Glass Drive-In Masking Layer

Improvement in Performance and Reliability with Cf4 Plasma Pretreatment on the Buffer Oxide Layer for Low-Temperature Polysilicon Thin-Film Transistor

Indium-zinc-tin-oxide thin-film-transistor reliability enhancement using fluoridation with CF 4 reactive sputtering

Simultaneous Enhancement of Electrical Performance and Negative Bias Illumination Stability for Low-Temperature Solution-Processed SnO2 Thin-Film Transistors by Fluorine Incorporation

Key Roles of Trace Oxygen Treatment for High‐Performance Zn‐Doped CuI P‐channel Transistors

Performance Enhancement of InGaZnO Top-Gate Thin Film Transistor With Low-Temperature High-Pressure Fluorine Treatment

P‐19: Student Poster: Enhanced Elevated‐Metal Metal‐Oxide Thin‐Film Transistors for Gate‐Driver Circuit Fabricated on a Flexible Substrate

P‐15: the Use of Fluorination to Enhance the Performance and the Reliability of Elevated‐Metal Metal‐Oxide Thin‐Film Transistors

Effects of Silicon Doping on the Performance of Tin Oxide Thin Film Transistors

P‐18: Student Poster: Non‐Oxidizing Pre‐Annealing for Enhanced Fluorination of an Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor

Improvement of PrIZO Thin Films by O$_{\text{2}}$ Plasma Treatment Combined With Low-Temperature Annealing for Thin-Film Transistors

Controlled defects and enhanced electronic extraction in fluorine-incorporated zinc oxide for high-performance planar perovskite solar cells

Effects of Nitrogen Doping on Performance of Amorphous SnSiO Thin Film Transistor

High-Performance Amorphous Zinc–Tin–Oxide Thin-Film Transistors with Low Tin Concentration