Abstract:The realization of electrospinning‐derived oxide nanofiber‐based transistors composed of In2O3 and ZnO has been reported. By controlling the doping level in nanofibers, significant enhancement in both the electron mobility and thin‐film transistor (TFT) stress stability have been demonstrated. Current findings elucidate the significant advance of electrospinning‐derived oxide nanofiber‐based transistors toward practical applications for future low‐cost and high‐performance electronics. Although In2O3 nanofibers (NFs) are regarded as one of the active channel materials for next‐generation, low‐cost thin‐film transistors (TFTs), these NFs‐based devices still suffer from the degraded carrier mobility and operational instability, limiting the ability of such devices to replace current polycrystalline silicon technologies. Here, it is shown that nanofiber channel transistors with high electron mobility and operational stability can be achieved by selectively doping Zn element into electrospun In2O3 NFs. By precisely manipulating the doping level during NFs fabrication, their crystallinity, surface morphology, and corresponding device performance can be regulated reliably for enhanced transistor performances. It has been detected that InZnO/SiO2 TFTs with an optimized Zn doping concentration of 50% have demonstrated the high field‐effect mobility (μFE) of 6.38 cm2 V−1 s−1, the larger ION/IOFF of 4.12 × 107 and operation in the energy‐efficient enhancement‐mode. Low frequency noise (LFN) measurements have displayed that the scattering and defects inside the NFs are effectively suppressed by the particular microstructure. When integrating ALD‐derived Al2O3 films as the gate dielectric into TFTs devices, their electron mobility and ION/IOFF can be further improved to 37.82 cm2 V−1 s−1 and 2.92 × 108, respectively. To demonstrate the potential toward more complex logic applications, a low voltage resistor‐loaded unipolar inverter is built by using InZnO/Al2O3 TFT, exhibiting a high gain of 20.95 and full swing characteristics. These optimized parameters have demonstrated the significant advance of this electrospinning technique toward practical applications for high performance and large‐scale electronics.

Intermittent O$_{\text{2}}$ Plasma Treatment as a Novel Strategy to Optimize the Electrical Properties of Nanofibers-Based Transistors

Performance Enhancement of Field-Effect Transistors Based on In2O3 Nanofiber Networks by Plasma Treatment

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Electrospinning‐Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation

Optimizing Oxygen Plasma Treatment Time to Improve the Characteristics of a-IGZO Thin-Film Transistors and Resistive-Load Inverters

Effect of Oxygen Treatment on the Electrical Performance and Reliability of IWO Thin-Film Transistors

Rapid Improvement in Thin Film Transistors with Atomic-Layer-Deposited InOxChannels Via O2Plasma Treatment

Improvement of PrIZO Thin Films by O$_{\text{2}}$ Plasma Treatment Combined With Low-Temperature Annealing for Thin-Film Transistors

Influence of Oxygen Plasma Treatment on the Amorphous IGZO Thin Film Transistors

Performance improvement in electrospun InGaZnO nanofibres field-effect-transistors using low thermal budget microwave calcination and Ar/O2 mixed-plasma surface treatment

Enhancement of Electrical Stability in Solution Processed In$_{\text{2}}$O$_{\text{3}}$ TFT by an Oxygen Plasma-Assisted Treatment

Effect of Oxygen Plasma Treatment on the Performance of GQDs-Modulated InGaZnO Thin-Film Transistors

Investigation of oxygen plasma treatment on the device performance of solution-processed a-IGZO thin film transistors

Performance Enhancement of Electrospun IGZO-Nanofiber-Based Field-Effect Transistors with High- k Gate Dielectrics through Microwave Annealing and Postcalcination Oxygen Plasma Treatment

One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature

Fast Improved Thin-Film Transistors with Atomic-Layer-Deposited In2O3 Channels Via O2 Plasma Treatment

The Optimization of Contact Interface Between Metal/mos2 FETs by Oxygen Plasma Treatment

Low-Voltage Operating Field-Effect Transistors and Inverters Based on In2O3 Nanofiber Networks

Electrical and Hysteresis Characteristics of Top-Gate InGaZnO Thin-Film Transistors with Oxygen Plasma Treatment Prior to TEOS Oxide Gate Dielectrics

Performance Improvement of a-In-Ga-Sn-O Thin-Film Transistor with Oxygen Doping by Reactive Sputtering Method

Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations