Abstract:The realization of electrospinning‐derived oxide nanofiber‐based transistors composed of In2O3 and ZnO has been reported. By controlling the doping level in nanofibers, significant enhancement in both the electron mobility and thin‐film transistor (TFT) stress stability have been demonstrated. Current findings elucidate the significant advance of electrospinning‐derived oxide nanofiber‐based transistors toward practical applications for future low‐cost and high‐performance electronics. Although In2O3 nanofibers (NFs) are regarded as one of the active channel materials for next‐generation, low‐cost thin‐film transistors (TFTs), these NFs‐based devices still suffer from the degraded carrier mobility and operational instability, limiting the ability of such devices to replace current polycrystalline silicon technologies. Here, it is shown that nanofiber channel transistors with high electron mobility and operational stability can be achieved by selectively doping Zn element into electrospun In2O3 NFs. By precisely manipulating the doping level during NFs fabrication, their crystallinity, surface morphology, and corresponding device performance can be regulated reliably for enhanced transistor performances. It has been detected that InZnO/SiO2 TFTs with an optimized Zn doping concentration of 50% have demonstrated the high field‐effect mobility (μFE) of 6.38 cm2 V−1 s−1, the larger ION/IOFF of 4.12 × 107 and operation in the energy‐efficient enhancement‐mode. Low frequency noise (LFN) measurements have displayed that the scattering and defects inside the NFs are effectively suppressed by the particular microstructure. When integrating ALD‐derived Al2O3 films as the gate dielectric into TFTs devices, their electron mobility and ION/IOFF can be further improved to 37.82 cm2 V−1 s−1 and 2.92 × 108, respectively. To demonstrate the potential toward more complex logic applications, a low voltage resistor‐loaded unipolar inverter is built by using InZnO/Al2O3 TFT, exhibiting a high gain of 20.95 and full swing characteristics. These optimized parameters have demonstrated the significant advance of this electrospinning technique toward practical applications for high performance and large‐scale electronics.

Performance Enhancement of Field-Effect Transistors Based on In2O3 Nanofiber Networks by Plasma Treatment

Intermittent O$_{\text{2}}$ Plasma Treatment as a Novel Strategy to Optimize the Electrical Properties of Nanofibers-Based Transistors

Rapid Improvement in Thin Film Transistors with Atomic-Layer-Deposited InOxChannels Via O2Plasma Treatment

Performance Enhancement of Electrospun IGZO-Nanofiber-Based Field-Effect Transistors with High- k Gate Dielectrics through Microwave Annealing and Postcalcination Oxygen Plasma Treatment

Performance improvement in electrospun InGaZnO nanofibres field-effect-transistors using low thermal budget microwave calcination and Ar/O2 mixed-plasma surface treatment

Electrospinning-Driven InHfOx Nanofiber Channel Field-Effect Transistors and Humidity Stability Exploration

Aligned Indium Oxide Nanofiber to Achieve High Mobility and High Stability Field-Effect Transistor

Annealing effects of In2O3 thin films on electrical properties and application in thin film transistors

Self-Welding and Low-Temperature Formation of Metal Oxide Nanofiber Networks and its Application to Electronic Devices

Fast Improved Thin-Film Transistors with Atomic-Layer-Deposited In2O3 Channels Via O2 Plasma Treatment

High performance and illumination stable In2O3 nanofibers-based field effect transistors by doping praseodymium

Effect of CF4 Plasma Treatment on Morphology, Composition and Field Emission Properties of ZnO Nanowires

Low-Voltage Operating Field-Effect Transistors and Inverters Based on In2O3 Nanofiber Networks

Super-low Turn-on and Threshold Electric Fields of Plasma-Treated Partly Fe-filled Carbon Nanotube Films

Enhanced Near-Band-edge Emission and Field Emission Properties from Plasma Treated ZnO Nanowires

Controllable Electrical Properties of Metal-Doped In2O3 Nanowires for High-Performance Enhancement-Mode Transistors.

Electrospinning‐Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation

The Optimization of Contact Interface Between Metal/mos2 FETs by Oxygen Plasma Treatment

Amelioration of interfacial combination and suppression of oxygen vacancies for high performance environmentally friendly electrospun SnYO nanofiber field-effect transistors

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Indium Doping-Assisted Monolayer Ga2O3 Exfoliation for Performance-Enhanced MOSFETs.