Abstract:The realization of electrospinning‐derived oxide nanofiber‐based transistors composed of In2O3 and ZnO has been reported. By controlling the doping level in nanofibers, significant enhancement in both the electron mobility and thin‐film transistor (TFT) stress stability have been demonstrated. Current findings elucidate the significant advance of electrospinning‐derived oxide nanofiber‐based transistors toward practical applications for future low‐cost and high‐performance electronics. Although In2O3 nanofibers (NFs) are regarded as one of the active channel materials for next‐generation, low‐cost thin‐film transistors (TFTs), these NFs‐based devices still suffer from the degraded carrier mobility and operational instability, limiting the ability of such devices to replace current polycrystalline silicon technologies. Here, it is shown that nanofiber channel transistors with high electron mobility and operational stability can be achieved by selectively doping Zn element into electrospun In2O3 NFs. By precisely manipulating the doping level during NFs fabrication, their crystallinity, surface morphology, and corresponding device performance can be regulated reliably for enhanced transistor performances. It has been detected that InZnO/SiO2 TFTs with an optimized Zn doping concentration of 50% have demonstrated the high field‐effect mobility (μFE) of 6.38 cm2 V−1 s−1, the larger ION/IOFF of 4.12 × 107 and operation in the energy‐efficient enhancement‐mode. Low frequency noise (LFN) measurements have displayed that the scattering and defects inside the NFs are effectively suppressed by the particular microstructure. When integrating ALD‐derived Al2O3 films as the gate dielectric into TFTs devices, their electron mobility and ION/IOFF can be further improved to 37.82 cm2 V−1 s−1 and 2.92 × 108, respectively. To demonstrate the potential toward more complex logic applications, a low voltage resistor‐loaded unipolar inverter is built by using InZnO/Al2O3 TFT, exhibiting a high gain of 20.95 and full swing characteristics. These optimized parameters have demonstrated the significant advance of this electrospinning technique toward practical applications for high performance and large‐scale electronics.

Low-Voltage Operating Field-Effect Transistors and Inverters Based on In2O3 Nanofiber Networks

Electrospinning‐Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation

Electrospinning-Driven InHfOx Nanofiber Channel Field-Effect Transistors and Humidity Stability Exploration

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Electrospun Highly Aligned IGZO Nanofiber Arrays with Low‐Thermal‐Budget for Challenging Transistor and Integrated Electronics

Electrospinning-Driven Dual-Channel-Based Field-Effect Transistors by Heterojunction Architecture

Self-Welding and Low-Temperature Formation of Metal Oxide Nanofiber Networks and its Application to Electronic Devices

Aligned Indium Oxide Nanofiber to Achieve High Mobility and High Stability Field-Effect Transistor

ZnO Nanofiber Field‐Effect Transistor Assembled by Electrospinning

Amelioration of interfacial combination and suppression of oxygen vacancies for high performance environmentally friendly electrospun SnYO nanofiber field-effect transistors

Electrospun Stacked Dual‐Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture

Sub-kT/q Switching in In2O3 Nanowire Negative Capacitance Field-Effect Transistors

Intermittent O$_{\text{2}}$ Plasma Treatment as a Novel Strategy to Optimize the Electrical Properties of Nanofibers-Based Transistors

Zinc Oxide Nanowire Networks for Macroelectronic Devices

Performance Enhancement of Field-Effect Transistors Based on In2O3 Nanofiber Networks by Plasma Treatment

Electrospun Nanofibers for Integrated Sensing, Storage, and Computing Applications

Preparation and Electrical Properties of Electrospun Tin-Doped Indium Oxide Nanowires

Controllable Electrical Properties of Metal-Doped In2O3 Nanowires for High-Performance Enhancement-Mode Transistors.

High Annealing Stability of InAlZnO Nanofiber Field-Effect Transistors with Improved Morphology by Al Doping

In2O3 Nanofiber Neuromorphic Transistors for Reservoir Computing

Sub-5-nm Ultra-thin In_2O_3 Transistors for High-Performance and Low-Power Electronic Applications