Abstract:The realization of electrospinning‐derived oxide nanofiber‐based transistors composed of In2O3 and ZnO has been reported. By controlling the doping level in nanofibers, significant enhancement in both the electron mobility and thin‐film transistor (TFT) stress stability have been demonstrated. Current findings elucidate the significant advance of electrospinning‐derived oxide nanofiber‐based transistors toward practical applications for future low‐cost and high‐performance electronics. Although In2O3 nanofibers (NFs) are regarded as one of the active channel materials for next‐generation, low‐cost thin‐film transistors (TFTs), these NFs‐based devices still suffer from the degraded carrier mobility and operational instability, limiting the ability of such devices to replace current polycrystalline silicon technologies. Here, it is shown that nanofiber channel transistors with high electron mobility and operational stability can be achieved by selectively doping Zn element into electrospun In2O3 NFs. By precisely manipulating the doping level during NFs fabrication, their crystallinity, surface morphology, and corresponding device performance can be regulated reliably for enhanced transistor performances. It has been detected that InZnO/SiO2 TFTs with an optimized Zn doping concentration of 50% have demonstrated the high field‐effect mobility (μFE) of 6.38 cm2 V−1 s−1, the larger ION/IOFF of 4.12 × 107 and operation in the energy‐efficient enhancement‐mode. Low frequency noise (LFN) measurements have displayed that the scattering and defects inside the NFs are effectively suppressed by the particular microstructure. When integrating ALD‐derived Al2O3 films as the gate dielectric into TFTs devices, their electron mobility and ION/IOFF can be further improved to 37.82 cm2 V−1 s−1 and 2.92 × 108, respectively. To demonstrate the potential toward more complex logic applications, a low voltage resistor‐loaded unipolar inverter is built by using InZnO/Al2O3 TFT, exhibiting a high gain of 20.95 and full swing characteristics. These optimized parameters have demonstrated the significant advance of this electrospinning technique toward practical applications for high performance and large‐scale electronics.

High Annealing Stability of InAlZnO Nanofiber Field-Effect Transistors with Improved Morphology by Al Doping

Highly Stable Atomic Layer Deposited Zinc Oxide Thin-Film Transistors Incorporating Triple O 2 Annealing

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Electrospinning‐Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation

High-performance Field Effect Transistors Based on Large Ratio Metal (al、ga、cr) Doped In2O3 Nanofibers

Effect of Al Doping on Performance of ZnO Thin Film Transistors

Performance Enhancement in InZnO Thin-Film Transistors with Compounded ZrO2–Al2O3 Nanolaminate As Gate Insulators

Controllable Electrical Properties of Metal-Doped In2O3 Nanowires for High-Performance Enhancement-Mode Transistors.

Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin-Film Transistors by Post Annealing in O2

Significant Enhancement in the Thermoelectric Performance of Aluminum-Doped ZnO Tuned by Pore Structure

ZnO Nanofiber Thin‐Film Transistors with Low‐Operating Voltages

Effect of Annealing Treatment on the Structural, Optical, and Electrical Properties of Al-doped ZnO Thin Films

High-performance Enhancement-Mode Thin-Film Transistors Based on Mg-doped In2O3 Nanofiber Networks

Combustion Synthesis of Electrospun LaInO Nanofiber for High-Performance Field-Effect Transistors

Annealing Treatment on Amorphous InAlZnO Films for Thin-Film Transistors

Performance Improvement of Atomic Layer-Deposited ZnO/Al2O3Thin-Film Transistors by Low-Temperature Annealing in Air

Amorphous Semi-Insulating Al-doped In2O3 Growth by Atomic Layer Deposition for Thin-Film Transistors

Electrospun Highly Aligned IGZO Nanofiber Arrays with Low‐Thermal‐Budget for Challenging Transistor and Integrated Electronics

P‐1.11: Back‐End‐of‐Line Compatible Al‐doped Indium Zinc Oxide Transistors with Excellent Thermal Stability

Modulating Electrical Performances of In2O3 Nanofiber Channel Thin Film Transistors Via Sr Doping

Defect Modification in Zninsno Transistor with Solution-Processed Al2o3 Dielectric by Annealing