Abstract:The realization of electrospinning‐derived oxide nanofiber‐based transistors composed of In2O3 and ZnO has been reported. By controlling the doping level in nanofibers, significant enhancement in both the electron mobility and thin‐film transistor (TFT) stress stability have been demonstrated. Current findings elucidate the significant advance of electrospinning‐derived oxide nanofiber‐based transistors toward practical applications for future low‐cost and high‐performance electronics. Although In2O3 nanofibers (NFs) are regarded as one of the active channel materials for next‐generation, low‐cost thin‐film transistors (TFTs), these NFs‐based devices still suffer from the degraded carrier mobility and operational instability, limiting the ability of such devices to replace current polycrystalline silicon technologies. Here, it is shown that nanofiber channel transistors with high electron mobility and operational stability can be achieved by selectively doping Zn element into electrospun In2O3 NFs. By precisely manipulating the doping level during NFs fabrication, their crystallinity, surface morphology, and corresponding device performance can be regulated reliably for enhanced transistor performances. It has been detected that InZnO/SiO2 TFTs with an optimized Zn doping concentration of 50% have demonstrated the high field‐effect mobility (μFE) of 6.38 cm2 V−1 s−1, the larger ION/IOFF of 4.12 × 107 and operation in the energy‐efficient enhancement‐mode. Low frequency noise (LFN) measurements have displayed that the scattering and defects inside the NFs are effectively suppressed by the particular microstructure. When integrating ALD‐derived Al2O3 films as the gate dielectric into TFTs devices, their electron mobility and ION/IOFF can be further improved to 37.82 cm2 V−1 s−1 and 2.92 × 108, respectively. To demonstrate the potential toward more complex logic applications, a low voltage resistor‐loaded unipolar inverter is built by using InZnO/Al2O3 TFT, exhibiting a high gain of 20.95 and full swing characteristics. These optimized parameters have demonstrated the significant advance of this electrospinning technique toward practical applications for high performance and large‐scale electronics.

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Field Effect Transistors Based on in Situ Fabricated Graphene Scaffold–ZrO2 Nanofilms

High Performance Top-Gated Ferroelectric Field Effect Transistors Based on Two-Dimensional ZnO Nanosheets

Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects

Carrier Tuning of 2D Electron Gas in Field-Effect Devices Based on Al2O3/ZnO Heterostructures.

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High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities

Scalable Submicron Channel Fabrication by Suspended Nanofiber Lithography for Short‐Channel Field‐Effect Transistors

Piezotronic and Piezo-Phototronic Effects-Enhanced Core–Shell Structure-Based Nanowire Field-Effect Transistors

Three-dimensional Vertical ZnO Transistors with Suspended Top Electrodes Fabricated by Focused Ion Beam Technology

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit