Abstract:The realization of electrospinning‐derived oxide nanofiber‐based transistors composed of In2O3 and ZnO has been reported. By controlling the doping level in nanofibers, significant enhancement in both the electron mobility and thin‐film transistor (TFT) stress stability have been demonstrated. Current findings elucidate the significant advance of electrospinning‐derived oxide nanofiber‐based transistors toward practical applications for future low‐cost and high‐performance electronics. Although In2O3 nanofibers (NFs) are regarded as one of the active channel materials for next‐generation, low‐cost thin‐film transistors (TFTs), these NFs‐based devices still suffer from the degraded carrier mobility and operational instability, limiting the ability of such devices to replace current polycrystalline silicon technologies. Here, it is shown that nanofiber channel transistors with high electron mobility and operational stability can be achieved by selectively doping Zn element into electrospun In2O3 NFs. By precisely manipulating the doping level during NFs fabrication, their crystallinity, surface morphology, and corresponding device performance can be regulated reliably for enhanced transistor performances. It has been detected that InZnO/SiO2 TFTs with an optimized Zn doping concentration of 50% have demonstrated the high field‐effect mobility (μFE) of 6.38 cm2 V−1 s−1, the larger ION/IOFF of 4.12 × 107 and operation in the energy‐efficient enhancement‐mode. Low frequency noise (LFN) measurements have displayed that the scattering and defects inside the NFs are effectively suppressed by the particular microstructure. When integrating ALD‐derived Al2O3 films as the gate dielectric into TFTs devices, their electron mobility and ION/IOFF can be further improved to 37.82 cm2 V−1 s−1 and 2.92 × 108, respectively. To demonstrate the potential toward more complex logic applications, a low voltage resistor‐loaded unipolar inverter is built by using InZnO/Al2O3 TFT, exhibiting a high gain of 20.95 and full swing characteristics. These optimized parameters have demonstrated the significant advance of this electrospinning technique toward practical applications for high performance and large‐scale electronics.

Electrospinning-Driven InHfOx Nanofiber Channel Field-Effect Transistors and Humidity Stability Exploration

Low-Voltage Operating Field-Effect Transistors and Inverters Based on In2O3 Nanofiber Networks

Electrospinning‐Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation

Electrospinning-Driven Dual-Channel-Based Field-Effect Transistors by Heterojunction Architecture

Aligned Indium Oxide Nanofiber to Achieve High Mobility and High Stability Field-Effect Transistor

Electrospun Highly Aligned IGZO Nanofiber Arrays with Low‐Thermal‐Budget for Challenging Transistor and Integrated Electronics

ZnO Nanofiber Field‐Effect Transistor Assembled by Electrospinning

Amelioration of interfacial combination and suppression of oxygen vacancies for high performance environmentally friendly electrospun SnYO nanofiber field-effect transistors

Hf-Contacted High-Performance Air-Stable N-Type Carbon Nanotube Transistors

Self-Welding and Low-Temperature Formation of Metal Oxide Nanofiber Networks and its Application to Electronic Devices

Electrospun Stacked Dual‐Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture

Performance Enhancement of Field-Effect Transistors Based on In2O3 Nanofiber Networks by Plasma Treatment

High Annealing Stability of InAlZnO Nanofiber Field-Effect Transistors with Improved Morphology by Al Doping

Intermittent O$_{\text{2}}$ Plasma Treatment as a Novel Strategy to Optimize the Electrical Properties of Nanofibers-Based Transistors

Optimized MFS Stack with N-Doped TiO2 Channel and La-Doped HfO2 Ferroelectric Layer for Highly Stable FeFETs

High performance and illumination stable In2O3 nanofibers-based field effect transistors by doping praseodymium

Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer.

In situ transmission electron microscopy studies on nanomaterials and HfO2-based storage nanodevices

Sub-kT/q Switching in In2O3 Nanowire Negative Capacitance Field-Effect Transistors

All-Water-Driven High-k HfO2 Gate Dielectrics and Applications in Thin Film Transistors

Improving The Electrical Properties Of Inas Nanowire Field Effect Transistors By Covering Them With Y2o3/Hfo2 Layers