Abstract:Despite the extensive ongoing research on MoS2 field effect transistors (FETs), the key role of device processing conditions in the chemistry involved at the metal-to-MoS2 interface and their influence on the electrical performance are often overlooked. In addition, the majority of reports on MoS2 contacts are based on exfoliated MoS2, whereas synthetic films are even more susceptible to the changes made in device processing conditions. In this paper, working FETs with atomic layer deposition (ALD)-based MoS2 films and Ti/Au contacts are demonstrated, using current–voltage (I–V) characterization. In pursuit of optimizing the contacts, high-vacuum thermal annealing as well as O2/Ar plasma cleaning treatments are introduced, and their influence on the electrical performance is studied. The electrical findings are linked to the interface chemistry through X-ray photoelectron spectroscopy (XPS) and scanning transmission electron microscopy (STEM) analyses. XPS evaluation reveals that the concentration of organic residues on the MoS2 surface, as a result of resist usage during the device processing, is significant. Removal of these contaminations with O2/Ar plasma changes the MoS2 chemical state and enhances the MoS2 electrical properties. Based on the STEM analysis, the observed progress in the device electrical characteristics could also be associated with the formation of a continuous TiSx layer at the Ti-to-MoS2 interface. Scaling down the Ti interlayer thickness and replacing it with Cr is found to be beneficial as well, leading to further device performance advancements. Our findings are of value for attaining optimal contacts to synthetic MoS2 films.This article has not yet been cited by other publications.

The Optimization of Contact Interface Between Metal/mos2 FETs by Oxygen Plasma Treatment

On the Contact Optimization of ALD-Based MoS 2 FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance

Charge neutral MoS2 field effect transistors through oxygen plasma treatment

Remote N-2 Plasma Treatment to Deposit Ultrathin High-K Dielectric As Tunneling Contact Layer for Single-Layer MoS2 MOSFET

A Novel Contact Engineering Method for Transistors Based on Two-Dimensional Materials

Contact Resistance Optimization in MoS${_2}$ Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications

The Evolution of MoS2 Properties under Oxygen Plasma Treatment and Its Application in MoS2 Based Devices

Improved Contact Resistivity and Enhanced Mobility of Metal-Graphene FET by Inserting Ultra-Thin MoOx Layer at Source/drain Region

Contact Optimisation Strategy for Wafer-Scale Field-Effect Transistors Based on Two-Dimensional Semiconductors

Plasma-optimized contact for high-performance PdSe2 nanoflake-based field-effect transistors

Contact Resistance Engineering in WS2-Based FET with MoS2 Under-Contact Interlayer: A Statistical Approach

Improving electron mobility in MoS 2 field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

Approaching Ohmic Contacts for Ideal Monolayer MoS2 Transistors Through Sulfur-Vacancy Engineering

Electrical contacts to few-layer MoS 2 with phase-engineering and metal intercalation for tuning the contact performance

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

Enhanced Electrical Properties Of Lithography-Free Fabricated Mos2 Field Effect Transistors With Chromium Contacts

Improved Contact Properties Of Metal/Graphene Interface By Inserting Moox Dielectric Layer

Transport Properties of MoO&lt;sub&gt;3&lt;/sub&gt; Contacted Few-Layer MoS&lt;sub&gt;2&lt;/sub&gt; N-type Field-Effect Transistor

Impact of Plasma Postoxidation Temperature on the Electrical Properties of ${\rm Al}_{2}{\rm O}_{3}/{\rm GeO}_{x}/{\rm Ge}$ pMOSFETs and nMOSFETs

Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts

Femtosecond Laser Irradiation-Mediated MoS2-Metal Contact Engineering for High-Performance Field-Effect Transistors and Photodetectors.