Abstract:Ultrathin indium oxide (InOx) films (≤5 nm), which are grown by plasma-enhanced (PE) atomic layer deposition (ALD) with (C2H5)2InCH3 and O2 plasma, are explored as channels of thin-film transistors (TFTs). First, we investigate the effects of channel thickness ( ${T}_{\text{ch}}$ ), channel length ( ${L}_{\text{ch}}$ ), and post-annealing conditions on the performance of TFTs with HfO2 gate dielectrics, respectively. The results indicate that superior overall performance can be achieved for the device with 2.5 nm ${T}_{\text{ch}}$ , $2 ~\mu \text{m} {L}_{\text{ch}}$ , and 8.5 nm HfO2 gate dielectric after annealing at 325 °C for 180 s in O2. Increasing the post-annealing temperature to 350 °C degrades the TFTs because of crystallization of HfO2 and outdiffusion of In element. Furthermore, with a PE chemical vapor-deposited SiO2 passivation layer on the back of the channel, the performance of the TFTs is significantly improved after post-annealing, especially at 300 °C for 1 h in air, such as near-zero-threshold voltage, a very small subthreshold slope (SS) of 69 mV/dec, a very high On/Off current ratio of ~1010, and relatively high field effect mobility of 17 cm2/ $\text{V}\cdot \text{s}$ . Finally, the positive and negative gate bias stress (NGBS) measurements of the devices also indicate that the SiO2 passivation layer can improve remarkably the NGBS stability. Thus, such a kind of device could be very promising for low-voltage and low-power applications.

P‐1.1: Co‐sputtering‐deposited Hf‐doped ITO Thin Films for Thin Film Transistors Application

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Sputtering-Deposited Hafnium Oxide Dielectric for High-Performance InGaZnO Thin Film Transistors

Improved Environmental Stability of InSnO Thin-Film Transistor by Interface Engineering

High Mobility Thin-Film Transistor with Solution-Processed Hafnium-Oxide Dielectric and Zinc-Indium-Tin-Oxide Semiconductor

High-mobility hydrogenated polycrystalline In2O3 (In2O3:H) thin-film transistors

High Performance and Hysteresis-Free a-IGZO Thin Film Transistors Based on Spin-coated Hafnium Oxide Gate Dielectrics

Fabrication and performance of indium oxide based transparent thin film transistors

P‐1.11: High‐mobility ZnO thin‐film transistors with HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> bilayer dielectric

Effects of Hf Incorporation on Indium Zinc Oxide Thin-Film Transistors Using Solution Process

Tunable-performance All-Oxide Structure Field-Effect Transistor Based Atomic Layer Deposited Hf-doped In2O3 Thin Films.

Ultra-thin top-gate insulator of atomic-layer-deposited HfO x for amorphous InGaZnO thin-film transistors

Back-End-of-Line Compatible InSnO/ZnO Heterojunction Thin-Film Transistors With High Mobility and Excellent Stability

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

Effect of Electrical Performance and Reliability by Adjustment of the Sequence and Concentration of HfAlOx on IWO Thin-Film Transistors

High Performance (vth ~ 0 V, SS ~ 69 Mv/dec, IOn/IOff ~ 1010) Thin-Film Transistors Using Ultrathin Indium Oxide Channel and SiO2 Passivation

Effect of HfO2-Based Multi-Dielectrics on Electrical Properties of Amorphous In-Ga-Zn-O Thin Film Transistors

Ultra-thin Gate Insulator of Atomic-Layer-deposited AlOxand HfOxfor Amorphous InGaZnO Thin-Film Transistors.

High mobility and hysteresis free InGaSnO thin film transistors by co-sputtering via low temperature post annealing process

All-Water-Driven High-k HfO2 Gate Dielectrics and Applications in Thin Film Transistors

Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InO x:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors