Abstract:Bottom‐gate thin‐film transistors (TFTs) with ITO‐stabilized ZnO channel layers were successfully fabricated by co‐sputtering of ZnO target and ITO target. We investigate the effects of the post‐deposition thermal annealing temperature on the defects inside of the ITO‐stabilized ZnO thin film and on the electrical performance of ITO‐stabilized ZnO TFTs. The beneficial effect of various annealing temperature appears because of a reorganization of the amorphous network with controlling the defect chemistry in the films indicated by photoluminescence analysis. ITO‐stabilized ZnO thin film with the annealing temperature of 300°C exhibited less intense defect emission peaks due to reduction in the number of vacancies and interstitials via filling the oxygen vacancies with O2, and diffusion of zinc interstitial to exact sites (VZn) of the system. Furthermore, We systematically investigated the impact of various annealing temperature on their performance characteristics. It was found that ITO‐stabilized ZnO TFT with annealing temperature of 300°C exhibited fairly high electrical characteristics, especially with a saturation field‐effect mobility of 27.4 cm2V−1s−1 and the threshold voltage as low as −0.64 V. The implied correlation between the post‐deposition thermal treatment and the characteristics of a transistor was investigated and demonstrated by photoluminescence analysis.

Oxygen Partial Pressure and Annealing Temperature Influence on the Performance of Back-Channel-etch Zinc Tin Oxide Thin Film Transistors

22.2: The influence of Oxygen Partial Pressure on the Performance of back‐channel‐etched a‐ZTO Thin‐Film Transistors

High-Performance Back-Channel-Etch Thin-Film Transistors with Zinc Tin Oxide As Barrier Layer Via Spray Coating

Effects of Annealing Process on Characteristics of Fully Transparent Zinc Tin Oxide Thin-Film Transistor

Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors

High Performance Indium-Zinc-Oxide Thin-Film Transistors Fabricated with A Back-Channel-Etch-Technique

Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited Zno-Channel/Al2o3-Dielectric

Influence of O2 on Al-Zn-Sn-O TFTs in the Active Layer Deposition and Annealing Process

Effect of O2 Incorporation During the Channel Fabrication Process on Aluminum-Doped Zinc Oxide Thin-Film Transistor Characteristics

Effects of Etching Residue on Positive Shift of Threshold Voltage in Amorphous Indium–Zinc-Oxide Thin-Film Transistors Based on Back-Channel-Etch Structure

P‐1.2: Photoluminescence and Electrical Properties Study of ITO‐stabilized ZnO Thin‐Film Transistors with Different Annealing Temperatures

High‐Performance Back‐Channel‐Etched Thin‐Film Transistors with an InGaO/InZnO Stacked Channel

Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning

Performance Improvement of Atomic Layer-Deposited ZnO/Al2O3Thin-Film Transistors by Low-Temperature Annealing in Air

Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium–Gallium–Zinc Thin-Film-Transistors by CF 4 +O 2 Plasma Treatment

The Effects of Post Annealing Process on the Electrical Performance and Stability of Al-Zn-O Thin-Film Transistors

Improvement of Performance of Back Channel Etching InGaZnO Thin-Film Transistors by CF4 Plasma Treatment

Improvement of Performance of Back Channel Etching InGaZnO Thin-Film Transistors by CF 4 Plasma Treatment

Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique

A Comparative Study on the Effects of Annealing on the Characteristics of Zinc Oxide Thin-Film Transistors With Gate-Stacks of Different Gas-Permeability

Fabrication optimization to improve performance of gallium-doped zinc oxide thin film transistors