Abstract:Adjusting the metal composition of In–Ga–Zn–O (IGZO) is required to develop heterostack and/or 3D structures. Sequential plasma‐enhanced atomic layer deposition (PEALD) methods are introduced to adjust the composition of IGZO, and novel crystal structures are achieved. Based on a comprehensive analysis of the resulting physical and electrical properties, this work identifies the optimal In–Ga–Zn composition ratio for applied thin‐film transistor (TFT) applications. In–Ga–Zn–O (IGZO) material has been researched due to its favorable electrical characteristics for application in thin‐film transistor (TFT) applications such as low off current and relatively high mobility. However, most recently, as the developing and expanding application fields, conventional IGZO is a challenging aspect because higher mobility and excellent step‐coverage are required to be applied to high‐resolution displays and 3D NAND. In this regard, atomic layer deposition (ALD) is suggested as a novel deposition method for tackling issues. Here, this work systematically synthesizes IGZO films with various compositions by the supercycle technique of plasma‐enhanced ALD (PEALD) to determine the optimum metal cation composition range of the IGZO system for high‐mobility TFTs. The trends in the metal composition dependent electrical properties of ALD processed IGZO films are comparable to the previously reported results, while the structural properties are exclusive. Since both microstructure and carrier concentration affect to device characteristics complexly, the optimal In–Ga–Zn region is newly demonstrated via PEALD (XIn: 0.56–0.63, XGa: 0.13–0.17, XZn: 0.17–0.34). In this region, the device exhibits a remarkably high μFE of 41.4–43.7 cm2 V−1 s−1, a low subthreshold swing (SS) of 0.24–0.25 V decade−1, an initial threshold voltage (Vth) of −0.9 to −1.0 V, and a slight Vth shift (0.01 V) under the positive bias temperature stability (PBTS).

Facile routes to enhance doping efficiency using nanocomposite structures for high-mobility and stable PEALD-ITGO TFTs

Hydrogen-Doping-Enabled Boosting of the Carrier Mobility and Stability in Amorphous IGZTO Transistors

Plasma-enhanced atomic layer deposition of Sn-doped indium oxide semiconductor nano-films for thin-film transistors

Performance Improvement of a-In-Ga-Sn-O Thin-Film Transistor with Oxygen Doping by Reactive Sputtering Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High mobility of IGO/IGZO double-channel thin-film transistors by atomic layer deposition

Exploration of Chemical Composition of In–Ga–Zn–O System via PEALD Technique for Optimal Physical and Electrical Properties

Control of subthreshold swing using an in situ PEALD nano-laminated IGZO/Al2O3 multi-channel structured TFT

Organic/Inorganic Hybrid Top-Gate Transistors with Ultrahigh Electron Mobility via Enhanced Electron Pathways

Improved Field-Effect Mobility of In–Ga–Zn–O TFTs by Oxidized Metal Layer

Effects of Sn Doping on the Electrical Performance and Stability of Sub-V Operating Metal-Oxide Thin-Film Transistors Fabricated by Oxygen Annealing

Design of InZnSnO Semiconductor Alloys Synthesized by Supercycle Atomic Layer Deposition and Their Rollable Applications

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

P‐154: Late‐News Poster: High‐Performance Indium‐Gallium Oxide Thin‐Film‐Transistors via Plasma‐Enhanced Atomic‐Layer‐Deposition

Charge transport properties of high-mobility indium–gallium–zinc oxide thin-film transistors fabricated through atomic-layer deposition

Highly Dense and Stable p-Type Thin-Film Transistor Based on Atomic Layer Deposition SnO Fabricated by Two-Step Crystallization

Remarkable Stability Improvement with a High‐Performance PEALD‐IZO/IGZO Top‐Gate Thin‐Film Transistor via Modulating Dual‐Channel Effects

Enhanced Performance of P-Type SnO X Thin Film Transistors Through Defect Compensation

High-mobility Solution-Processed Tin Oxide Thin-Film Transistors with High-Κ Alumina Dielectric Working in Enhancement Mode.

A Novel Strategy to Achieve High-Performance Titanium-Doped InZnO Thin-Film Transistors Using Atomic Layer Deposition