Abstract:Top-gate self-aligned structured oxide thin-film transistors (TFTs) are suitable for the backplanes of high-end displays because of their low parasitic capacitances. The gate insulator (GI) deposition process should be carefully designed to manufacture a highly stable, high-mobility oxide TFT, particularly for a top-gate structure. In this study, a nanometer-thick Al2O3 layer via plasma-enhanced atomic layer deposition (PE-ALD) is deposited on the top-gate bottom-contact structured oxide TFT as the interface tailoring layer, which can also act as the hydrogen barrier to modulate carrier generation from hydrogen incorporation into the active layer of the TFT during the following process such as postannealing. Al-doped InSnZnO (Al/ITZO) with an Al/In/Sn/Zn atomic ratio composition of 1.7:24.3:40:34 was used for high mobility oxide semiconductors, and an Al2O3/Si3N4 bilayer was used for the GI. The degradation issue due to the excellent barrier characteristics of Al2O3 and Si3N4 can be minimized. An oxide TFT fabricated without the interface tailoring layer exhibits conductor-like characteristics owing to the excessive carrier generation by hydrogen incorporation. However, TFTs with additional interface layers exhibit reasonable characteristics and distinct trends in electrical characteristics depending on the thicknesses of the interface layers. The optimized devices exhibit an average turn-on voltage (Von) of -0.31 V with 33.63 cm2/(V s) of high mobility and 0.09 V/dec of subthreshold swing value. The interfaces between the active layer and hydrogen barriers were investigated using a high-resolution transmission electron microscope, contact angle measurement, and secondary ion mass spectroscopy to reveal the origin of the trends in properties between the devices. The top-gate device with a hydrogen barrier using the four-cycle deposition exhibits optimum electrical characteristics of both high mobility and good stability with only a 0.04 V shift of Von under positive-bias temperature stress (PBTS). We realize a high-end, self-aligned TFT with high mobility [34.7 cm2/(V s)] and negligible Von shift of -0.06 V under PBTS by applying a subnanometer hydrogen barrier.

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High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer

Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric

High-mobility Solution-Processed Tin Oxide Thin-Film Transistors with High-Κ Alumina Dielectric Working in Enhancement Mode.

High mobility of IGO/IGZO double-channel thin-film transistors by atomic layer deposition

Engineering a Subnanometer Interface Tailoring Layer for Precise Hydrogen Incorporation and Defect Passivation for High-End Oxide Thin-Film Transistors

Mobility Enhancement In Amorphous In-Ga-Zn-O Thin-Film Transistor By Induced Metallic In Nanoparticles And Cu Electrodes

Dual Gate Indium–Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide Gate Dielectrics

Facile routes to enhance doping efficiency using nanocomposite structures for high-mobility and stable PEALD-ITGO TFTs

A Bottom-Gate Metal–Oxide Thin-Film Transistor with Self-Aligned Source/Drain Regions

Full-solution-processed High Mobility Zinc-Tin-oxide Thin-Film-transistors

Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel Layer

Solution-processed Stacked TiO2 and Al2O3 Dielectric Layers for High Mobility Thin Film Transistor

Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors

Self-aligned Top-Gate Amorphous Oxide Thin-Film Transistors with IZO/IGZO Stacked Active Layer and Al Reacted Source/drain Region

Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors

Charge transport properties of high-mobility indium–gallium–zinc oxide thin-film transistors fabricated through atomic-layer deposition

High-Performance Amorphous InGaZnO Thin Film Transistor With High-k Van Der Waals Molecular Dielectric

Homojunction Structure Amorphous Oxide Thin Film Transistors with Ultra-High Mobility

Hydrogen-Doping-Enabled Boosting of the Carrier Mobility and Stability in Amorphous IGZTO Transistors