Abstract:The thin‐film transistors based on metal‐oxide semiconductors are often plagued by the stubborn trade‐off between mobility and stability. A novel combination of the metal‐oxide bilayer with an ultrathin interlayer of metal‐oxide dielectric forms an abrupt metal‐oxide heterojunction channel, synergistically enhancing performance and reliability. The large‐area low‐temperature processing capability and versatile characteristics of amorphous oxide semiconductor (AOS) thin‐film transistors (TFTs) are highly expected to promote the developments of next‐generation displays, 3D integrated circuit (3DIC), flexible chips, and electronics. However, the abundant native defects in AOSs engrain an inherent trade‐off between high mobility and trustworthy stability in AOS TFTs, fundamentally limiting the performance metrics and integration scale of oxide‐based electronics. To surmount this obstacle, the bilayer AOS channel is highly expected to combine the merits of diversified AOSs, while the efficiency of such an AOS "heterojunction" is debatable. This work systematically compares the TFTs based on amorphous InGaZnO (a‐IGZO), amorphous InZnO (a‐IZO), and a‐IZO/a‐IGZO bilayer. The active cation interaction between metal‐oxide semiconductors gives rise to a mixed AOS layer rather than a heterojunction channel, corresponding to moderate performance metrics. Such a spontaneous cation interdiffusion is effectively prevented using a dense metal‐oxide dielectric interlayer, aluminum oxide (AlOx). The sharpened interface effectively forms an abrupt metal‐oxide heterojunction, while the electron can still tunnel through the ultrathin AlOx to create a quantum well of 2D electron gas (2DEG). The overall performance and reliability of multilayer AOS TFT are synergistically enhanced using the proposed abrupt metal‐oxide heterojunction architecture.

P-21: Three-Mask Elevated-Metal Metal-Oxide Thin-Film Transistor Technology for High-Resolution AMOLED Application

Three-Mask Elevated-Metal Metal-Oxide Thin-Film Transistor with Self-Aligned Definition of the Active Island

High-performance and Reliable Elevated-Metal Metal-Oxide Thin-Film Transistor for High-Resolution Displays

Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistor: Technology and Characteristics

8.1: Invited Paper: Enhanced Elevated‐Metal Metal‐Oxide Thin‐Film Transistor Technology

Research Progress of Active Matrix Organic Light Emitting Diode (AMOLED) Displays Driven by Metal Oxide Thin Film Transistors (TFT)

Metal Oxide Thin Film Transistors and Their Application to Novel Display Technology

P‐17: Design of AMOLED Pixel Circuit Using LTPO TFTs with Enhanced Reliability

Elevated Metal Metal-Oxide Thin-Film Transistor — A New Bottom-Gate Transistor Architecture for Flat-Panel Displays

P.17: Integration of Solution Processed Oxide TFTs with Normal Structure OLEDs for Low‐voltage Operated Top‐Emitting AMOLEDs

24‐4: Flexible AMOLED Based on Oxide TFT with High Mobility

Transistor Technologies and Pixel Circuit Design for Efficient Active-Matrix Organic Light-Emitting Diode Displays

Self-Aligned Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor Using A Two-Mask Process Without Etching-Stop Layer

12.2: High Performance AMOLED Pixel Circuit Using Interleaved Emit Signals Based on Low‐Temperature Poly‐Si and Oxide (LTPO) TFTs

31-Inch 4K Flexible Display Employing Gate Driver With Metal Oxide Thin-Film Transistors

Self-Aligned Elevated-Metal Metal-Oxide Thin-Film Transistors for Displays and Flexible Electronics

AMOLED Backplane with Back-Channel Etched Oxide Thin Film Transistors

47-4:Invited Paper: Flexible AMOLED Based on Oxide TFT with High Mobility

High-Resolution Flexible AMOLED Display Integrating Gate Driver by Metal–Oxide TFTs

Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor

A Hybrid A-Si and Poly-Si TFTs Technology for AMOLED Pixel Circuits