Abstract:Two innovations in thin‐film devices promise improved image quality and power consumption for flat panel displays: amorphous metal gate thin‐film transistors (AMeTFTs) and amorphous metal nonlinear resistors (AMNRs). Sharing a mass‐producible thin‐film amorphous metal, these innovations create near‐ and long‐term roadmaps simplifying the production of "fast, flexible, and simple" high‐image quality, low‐power consumption displays on glass and plastic. Today's display industry faces transistor‐level challenges similar to those of complementary metal‐oxide semiconductor (CMOS) metal‐oxide semiconductor field‐effect transistors (MOSFETs) in the mid‐1990s. Learnings from MOSFETs inform the display industry's response to the limitations of silicon‐based thin‐film transistors (TFTs). Improvements sustaining Moore's Law drove the need to rethink MOSFET materials and structures. The display industry needs fundamental innovation at the device level. New thin‐film devices enable an inflection point in the use of displays, just as fin field‐effect transistor (FinFET) defined the inflection point in CMOS in the 2000s. This paper outlines two innovations in thin‐film device technology that offers improvement in image quality and power consumption of flat panel displays: amorphous metal gate TFTs (AMeTFTs) and amorphous metal nonlinear resistors (AMNRs). Linked through a single core material set based on mass‐producible, thin‐film amorphous metals, these two innovations create near‐ and long‐term roadmaps simplifying the production of high‐image quality, low‐power consumption displays on glass (now) and plastic (future). In particular, the field‐effect mobility of indium gallium zinc oxide (IGZO) AMeTFTs (55–72 cm2/Vs) exceeds that of IGZO TFTs developed by existing display manufacturers without the need for atomic layer deposition or vertical stacking of heterostructure semiconductor films, making AMeTFTs a natural choice for the new G8.5–G8.7 fabs targeting IGZO backplanes.

Elevated Metal Metal-Oxide Thin-Film Transistor — A New Bottom-Gate Transistor Architecture for Flat-Panel Displays

Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistor: Technology and Characteristics

High-performance and Reliable Elevated-Metal Metal-Oxide Thin-Film Transistor for High-Resolution Displays

Self-Aligned Elevated-Metal Metal-Oxide Thin-Film Transistors for Displays and Flexible Electronics

8.1: Invited Paper: Enhanced Elevated‐Metal Metal‐Oxide Thin‐Film Transistor Technology

A Bottom-Gate Metal–Oxide Thin-Film Transistor with Self-Aligned Source/Drain Regions

Characteristics of Elevated-Metal Metal-Oxide Thin-Film Transistors Based on Indium-Tin-Zinc Oxide

Three-Mask Elevated-Metal Metal-Oxide Thin-Film Transistor with Self-Aligned Definition of the Active Island

8.2: Invited Paper: Elevated‐Metal Metal‐Oxide Thin‐Film Transistor with Self‐Aligned Source/Drain Regions

P-21: Three-Mask Elevated-Metal Metal-Oxide Thin-Film Transistor Technology for High-Resolution AMOLED Application

High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer

Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor

Structure Optimization on Elevated-Metal A-Ingazno Thin Film Transistors

Innovations in thin‐film electronics for the new generation of displays

Organic/Inorganic Hybrid Top-Gate Transistors with Ultrahigh Electron Mobility via Enhanced Electron Pathways

50‐4: Invited Paper: Low‐Temperature Metal‐Oxide Thin‐Film Transistor Technology and the Realization of Electronic Systems on Flexible Substrates

High-Performance Flexible Tin-Zinc-Oxide Thin-Film Transistors Fabricated on Plastic Substrates

The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays

Present status of electric-double-layer thin-film transistors and their applications

15.1: Invited Paper: A Low‐Temperature Elevated‐Metal Metal‐Oxide Thin‐Film Transistor Technology for Flexible Electronics

A low-temperature photoresist-based film-profile engineering scheme for fabricating bottom- and double-gated indium–gallium–zinc oxide TFTs