Abstract:Self‐aligned gate transistors are developed with bilayer source/drain electrodes and a photonically cured indium‐gallium‐zinc‐oxide as the semiconducting channel. The proposed transistor architecture minimizes the overlap capacitances and access resistance while enabling precise electrode work function engineering without increasing manufacturing complexity. The ensuing transistors exhibit high electron mobility, small subthreshold swing, and low contact resistance. Metal oxide thin‐film transistors (TFTs) offer remarkable opportunities for applications in emerging transparent and flexible microelectronics. Unfortunately, their performance is hindered by limitations associated with parasitic effects, such as parasitic electrode overlap capacitances and high contact resistance, which can severely limit their dynamic behavior. Here, an innovative method is reported to fabricate coplanar self‐aligned‐gate (SAG) indium‐gallium‐zinc‐oxide (IGZO) transistors with engineered source/drain contacts. The manufacturing process starts with the deposition and patterning of a gate electrode/dielectric stack and its functionalization with an organic self‐assembled monolayer (SAM) as the surface energy modifier. A second gold (Au) electrode is subsequently deposited over the gate electrode stack. The overlapping region between the two electrodes is removed via self‐delamination under mild sonication, forming perfectly aligned coplanar Au‐Gate‐Au electrodes. Device fabrication is completed with the spin coating of the IGZO precursor, followed by rapid photonic curing. Replacing the gold source/drain contact with bimetallic electrodes such as Au/In and Au/ITO enables a reduction in contact resistance and improves the transistor performance remarkably without increasing manufacturing complexity. The method is highly scalable, robust, and applicable to other semiconductor materials.

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P-21: Three-Mask Elevated-Metal Metal-Oxide Thin-Film Transistor Technology for High-Resolution AMOLED Application

P‐1.5: Edge Effects of Three‐Mask Elevated‐Metal Metal‐Oxide Thin‐Film Transistor and Their Elimination

Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistor: Technology and Characteristics

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8.1: Invited Paper: Enhanced Elevated‐Metal Metal‐Oxide Thin‐Film Transistor Technology

Self-Aligned Elevated-Metal Metal-Oxide Thin-Film Transistors for Displays and Flexible Electronics

8.2: Invited Paper: Elevated‐Metal Metal‐Oxide Thin‐Film Transistor with Self‐Aligned Source/Drain Regions

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High-performance and Reliable Elevated-Metal Metal-Oxide Thin-Film Transistor for High-Resolution Displays

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A Bottom-Gate Metal–Oxide Thin-Film Transistor with Self-Aligned Source/Drain Regions

Contact‐Engineering of Self‐Aligned‐Gate Metal Oxide Transistors Processed via Electrode Self‐Delamination and Rapid Photonic Curing

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Self-Assembled In-Plane Gate Oxide-Based Homojunction Thin-Film Transistors

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High Resolution Inkjet Printed Oxide Thin Film Transistors with Self-Aligned Fine Channel Bank Structure.

Facile Four-Mask Processes for Organic Thin-Film Transistor Integration Structure With Metal Interconnect

A Viable Self-Aligned Bottom-Gate MOS Transistor Technology for Deep Submicron 3-D SRAM