Abstract:The anomalous roll-up of the absolute value of threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vert \textit{V}_{\text{t}}\vert$</tex-math> </inline-formula> ) is observed for pMOS with embedded SiGe source/drain (eSiGe S/D) as the gate width decreases. It is revealed that the raised eSiGe height reduction for the wide pMOS may result in more B atoms diffusion into channel region from Si cap layer, causing the net doping level decrease of channel region as well as <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vert \textit{V}_{\text{t}}\vert$</tex-math> </inline-formula> . The wider the pMOS, the smaller the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vert \textit{V}_{\text{t}}\vert$</tex-math> </inline-formula> is; <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim$</tex-math> </inline-formula> 60% <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vert \textit{V}_{\text{t}}\vert$</tex-math> </inline-formula> increase can be observed as the gate width decreases. It is demonstrated that increasing the raised eSiGe height together with reducing B concentration in Si cap layer can effectively realize 20% <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vert \textit{V}_{\text{t}}\vert$</tex-math> </inline-formula> decrease without the pMOS performance degradation.

P‐1.5: Edge Effects of Three‐Mask Elevated‐Metal Metal‐Oxide Thin‐Film Transistor and Their Elimination

Three-Mask Elevated-Metal Metal-Oxide Thin-Film Transistor with Self-Aligned Definition of the Active Island

Research on Integrated Trench Etching for Trench-Type Power MOSFET

P-21: Three-Mask Elevated-Metal Metal-Oxide Thin-Film Transistor Technology for High-Resolution AMOLED Application

Suppression of Parasitic Jfet Effect in Trench Igbts by Using A Self-Aligned P Base Process

Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistor: Technology and Characteristics

Analysis of Passivation Techniques in InP HEMTs and Implementation of an Analytical Model of F(t) Based on the Small Signal Equivalent Circuit

Edge hole direct tunneling leakage in ultrathin gate oxide p-channel MOSFETs

8.1: Invited Paper: Enhanced Elevated‐Metal Metal‐Oxide Thin‐Film Transistor Technology

8.2: Invited Paper: Elevated‐Metal Metal‐Oxide Thin‐Film Transistor with Self‐Aligned Source/Drain Regions

Technology Issues for Self-aligned Top-Gate Amorphous Metal Oxide Thin-Film Transistors

Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process

Metal Boundary Effect Mitigation by HKMG Thermal Process Optimization in FinFET Integration Technology

Gate Dielectric Leakage Reduction in Hard-Mask Defined and Dry-Etch Patterned Organic TFTs Devices

Effective encapsulation of ZnO thin film transistors controlled by thermal energy

Optimization of Wet strip after Metal Hard Mask All-in-One Etch for metal void reduction and yield improvement

Metal hard-mask based AIO etch challenges and solutions

P‐1.5: Fabrication of Self‐Aligned Top‐Gate Amorphous InGaZnO Thin‐Film Transistors with Submicron Channel Length

Fabrication of a high-aspect-ratio stainless steel shadow mask and its application to pentacene thin-film transistors

Effective Suppression of <inline-formula> <tex-math notation="LaTeX">$\textit{V}_{\text{t}}$</tex-math> </inline-formula> Roll-Up for pMOS With Embedded SiGe Source/Drain

Channel-Shortening Effect Suppression of a High-Mobility Self-Aligned Oxide TFT Using Trench Structure