Effective Suppression of <inline-formula> <tex-math notation="LaTeX">$\textit{V}_{\text{t}}$</tex-math> </inline-formula> Roll-Up for pMOS With Embedded SiGe Source/Drain

Hao Liu,Song He,Cheng-Hao Liang,Ran Bi,Yu-Long Jiang,Jing Wan
DOI: https://doi.org/10.1109/TED.2024.3405469
IF: 3.1
2024-01-01
IEEE Transactions on Electron Devices
Abstract:The anomalous roll-up of the absolute value of threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vert \textit{V}_{\text{t}}\vert$</tex-math> </inline-formula> ) is observed for pMOS with embedded SiGe source/drain (eSiGe S/D) as the gate width decreases. It is revealed that the raised eSiGe height reduction for the wide pMOS may result in more B atoms diffusion into channel region from Si cap layer, causing the net doping level decrease of channel region as well as <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vert \textit{V}_{\text{t}}\vert$</tex-math> </inline-formula> . The wider the pMOS, the smaller the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vert \textit{V}_{\text{t}}\vert$</tex-math> </inline-formula> is; <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim$</tex-math> </inline-formula> 60% <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vert \textit{V}_{\text{t}}\vert$</tex-math> </inline-formula> increase can be observed as the gate width decreases. It is demonstrated that increasing the raised eSiGe height together with reducing B concentration in Si cap layer can effectively realize 20% <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vert \textit{V}_{\text{t}}\vert$</tex-math> </inline-formula> decrease without the pMOS performance degradation.
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