Abstract:The anomalous roll-up of the absolute value of threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vert \textit{V}_{\text{t}}\vert$</tex-math> </inline-formula> ) is observed for pMOS with embedded SiGe source/drain (eSiGe S/D) as the gate width decreases. It is revealed that the raised eSiGe height reduction for the wide pMOS may result in more B atoms diffusion into channel region from Si cap layer, causing the net doping level decrease of channel region as well as <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vert \textit{V}_{\text{t}}\vert$</tex-math> </inline-formula> . The wider the pMOS, the smaller the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vert \textit{V}_{\text{t}}\vert$</tex-math> </inline-formula> is; <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim$</tex-math> </inline-formula> 60% <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vert \textit{V}_{\text{t}}\vert$</tex-math> </inline-formula> increase can be observed as the gate width decreases. It is demonstrated that increasing the raised eSiGe height together with reducing B concentration in Si cap layer can effectively realize 20% <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vert \textit{V}_{\text{t}}\vert$</tex-math> </inline-formula> decrease without the pMOS performance degradation.

Significant Threshold Voltage Shift Induced by Ge Penetration into PMOSFET Channel of 28 Nm SRAM

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Research Progress in Ge-based Advanced Field Effect Transistor Technology

Threshold Voltage Adjustment by Varying Ge Content in SiGe p-Channel for Single Metal Shared Gate Complementary FET (CFET)

Analytical Threshold Voltage Models for Strained Si/Strained Si<sub>1-x</sub>Ge<sub>x</sub>/Relaxd Si<sub>1-y</sub>Ge<sub>y</sub> PMOSFET

Effective Suppression of <inline-formula> <tex-math notation="LaTeX">$\textit{V}_{\text{t}}$</tex-math> </inline-formula> Roll-Up for pMOS With Embedded SiGe Source/Drain

Si- and Ge-Based Electronic Devices

High performance and reliability Ge channel CMOS with a MoS 2 capping layer

Single Event Transients Induced by Pulse Laser in Ge Pmosfets and Its Supply Voltage Dependence

Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing

TCAD Study of the Raised SiGe Source/Drain in 40nm PMOS

Ge CMOS Technology with Advanced Interface and Junction Engineering.

III-V/Ge MOS Device Technologies for Low Power Integrated Systems

Design and Fabrication of Si/SiGe PMOSFETs

Effective Suppression of Vt Roll-Up for Pmos with Embedded SiGe Source/Drain

Simulation of Deep Submicron Strained SiGe Channel PMOSFET Performance

Investigation of Power MOSFET with Strained SiGe Channel

A New Low-cost Technique for Mobility Enhancement of PMOSFETs Strained by Ge Pre-amorphization Implantation for Source/Drain Extension

Embedded SiGe Source/drain and Temperature Degrading Junction Performance on <110> 45 Nm MOSFETs

Electron Mobility Enhancement Characteristics and Its Temperature Dependence in Strained-Si n-MOSFETs

Fabrication and selective wet etching of Si0.2Ge0.8/Ge multilayer for Si0.2Ge0.8 channel gate-all-around MOSFETs