Abstract:Introduction It has been increasingly difficult to further improve the performance of Si MOSFETs by conventional device scaling down . Therefore, the employment of high mobility channel materials has been considered as one of the most promising solutions to enhance the CMOS devices performance . Ge has been attracting a lot of interest as the channel material for MOSFETs, due to its much higher mobility for both hole and electron compared with those in Si . Although high mobility Ge MOSFETs has been realized by using the thick GeO2/Ge gate stacks , EOT scaling using high-k dielectrics is mandatory to realize high performance Ge MOSFETs. However, it has been found that the mobility is severely decreased in thin EOT high-k/Ge MOSFETs, attributable to the degradation of Ge MOS interface qualities. Thus, the formation of advanced Ge gate stacks with both ultrathin EOT and good interface qualities (low Dit) is the critical issue to obtain superior Ge MOSFETs. In this research, we demonstrate a plasma post oxidation (PPO) technique to oxidize the Ge surface by using oxygen plasma exposure to ALD high-k/Ge structures. Here the high-k layer serves as the oxygen barrier to prevent the growth of unnecessarily thick GeOx interfacial layer (IL), as well as the protection layer to eliminate any damage to the ultrathin GeOx/Ge interface after its formation. As a result, the high-k/GeOx/Ge gate stacks have been formed with sub-nm EOT and low Dit simultaneously. The high mobility Ge MOSFETs have also been realized by using these gate stack structures.

A New Low-cost Technique for Mobility Enhancement of PMOSFETs Strained by Ge Pre-amorphization Implantation for Source/Drain Extension

Hole mobility enhancement of pMOSFETs with strain channel induced by Ge pre-amorphization implantation for source/drain extension

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

High Mobility Strained-Ge Pmosfets with 0.7-Nm Ultrathin EOT Using Plasma Post Oxidation HfO2/Al2O3/GeOx Gate Stacks and Strain Modulation

High performance gate length 22 nm CMOS device with strained channel and EOT 1.2 nm

Mobility Enhancement Techniques for Ge and GeSn MOSFETs

Lateral Ge/Sige/Si Hetero-Channel P-Type Mosfets

Performance Analysis of Ultra-thin-Body, Double-Gate pMOSFETs at 5 nm Technology Node

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Fabrication of strained Si0.55Ge0.45 channel PMOSFETs directly on a Si substrate

High Mobility Ge CMOS Devices with Ultrathin EOT Gate Stacks Fabricated by Plasma Post Oxidation

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Mos Interface And Channel Engineering For High-Mobility Ge/Iii-V Cmos

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

Nige Metal Source/Drain Ge Pmosfets For Future High Performance Vlsi Circuits Applications

Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs

III-V/Ge MOS Device Technologies for Low Power Integrated Systems

Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing

Quantifying Hole Mobility Degradation in Pmosfets with a Strained-Si0.7ge0.3 Surface-Channel under an ALD TiN/Al2O3/HfAlOx/Al2O3 Gate Stack

High Mobility CMOS Technologies Using III-V/Ge Channels on Si Platform

Keynote; Material Challenges and Opportunities in Ge/III-V Channel MOSFETs