Abstract:The anomalous roll-up of the absolute value of threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vert \textit{V}_{\text{t}}\vert$</tex-math> </inline-formula> ) is observed for pMOS with embedded SiGe source/drain (eSiGe S/D) as the gate width decreases. It is revealed that the raised eSiGe height reduction for the wide pMOS may result in more B atoms diffusion into channel region from Si cap layer, causing the net doping level decrease of channel region as well as <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vert \textit{V}_{\text{t}}\vert$</tex-math> </inline-formula> . The wider the pMOS, the smaller the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vert \textit{V}_{\text{t}}\vert$</tex-math> </inline-formula> is; <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim$</tex-math> </inline-formula> 60% <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vert \textit{V}_{\text{t}}\vert$</tex-math> </inline-formula> increase can be observed as the gate width decreases. It is demonstrated that increasing the raised eSiGe height together with reducing B concentration in Si cap layer can effectively realize 20% <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vert \textit{V}_{\text{t}}\vert$</tex-math> </inline-formula> decrease without the pMOS performance degradation.

Increasing the Post Halo Implantation Anneal Temperature for the Effective Improvement of Threshold Voltage Roll-off Induced by the Unique Non-uniform Boron Diffusion from the Embedded Source/Drain

Effective Suppression of Vt Roll-Up for Pmos with Embedded SiGe Source/Drain

Effective Suppression of <inline-formula> <tex-math notation="LaTeX">$\textit{V}_{\text{t}}$</tex-math> </inline-formula> Roll-Up for pMOS With Embedded SiGe Source/Drain

Temperature Dependences of Threshold Voltage and Drain-Induced Barrier Lowering in 60nm Gate Length MOS Transistors

Simulation of Threshold Voltage Adjustment by B+ Implantation for Pmos-Radfet Application

Implantation-dominated Junction Depths of Low-Temperature and Electron-Beam-annealed As Source—drain Regions

Threshold Voltage Adjustment for 28nm HfOx/ZrOx/HfOx Gate Dielectric of Nmosfets Using DPN Process with Annealing Temperatures

Threshold Voltage Adjustment of Pmos-Radiation Field-Effect Transistor with Thick Thermal Oxide

Significant Threshold Voltage Lowering Induced by Contact Silicidation Annealing of FinFET

Channel Size-Dependent TED Effect in MOSFETs with Infrared Rapid Thermal Anneal

Threshold Voltage Variation in SOI Schottky-Barrier MOSFETs

Study on The Degradations Produced by Different P-base Diffusion Temperatures on SGT MOSFET With Approximate Threshold Voltage

Process optimization for random threshold voltage variation reduction in nanoscale MOSFET by 3D simulation

Threshold Voltage Adjustment by Varying Ge Content in SiGe p-Channel for Single Metal Shared Gate Complementary FET (CFET)

Analytical Model for Threshold Voltage of Hetero-Gate SOI MOSFET with Asymmetric Halo

Schottky Barrier Height Tuning Via The Dopant Segregation Technique Through Low-Temperature Microwave Annealing

Threshold Voltage Control for PMOSFETs Using an Undoped Epitaxial Si Channel and a P+-Sixge1−x Gate

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing.

Annealing Process on MOS channel Properties for Quasi‐Vertical GaN‐on‐Sapphire Trench MOSFET

Metal Boundary Effect Mitigation by HKMG Thermal Process Optimization in FinFET Integration Technology