Abstract:In this article, the degradation mechanisms of radiation-hardened vertical double-diffused MOSFETs (VD-MOSFET) experiencing gamma ray irradiation and annealing sequentially experiment device and simultaneously experiment device (Si-ED) are studied and compared. Experiments demonstrate that the Si-ED irradiated with gate bias (+12 V) has a lower oxide-trapped charges increment ( $Delta {N}_{ ext {ot}})$ and higher interface states increment ( $Delta {N}_{ ext {it}})$ , compared to those of sequential experiment device (Se-ED). However, for Si-ED irradiated with drain bias (200 V), it shows lower $Delta {N}_{ ext {ot}}$ and $Delta {N}_{ ext {it}}$ than those of Se-EDs, which is similar to that observed in the case of devices irradiated with three-terminal bias (200-V drain bias, −10-V gate bias, and source grounded). In addition, for all cases, it is seen that the drain-biased devices own a larger $Delta {N}_{ ext {ot}}$ but a smaller $Delta {N}_{ ext {it}}$ , compared to those of gate-biased ones, and the three-terminal-biased devices show the lowest, especially in Si-ED. As a result, the variations of $Delta {N}_{ ext {ot}}$ and $Delta {N}_{ ext {it}}$ could cause different degradations of threshold voltage, breakdown voltage, leakage current, and ON-state resistance of devices, which would inevitably threaten the proper functioning of electrical systems. Moreover, in this article, it is concluded that the existing standard, i.e., accelerated annealing after irradiation, cannot reflect the actual radiation reliability of devices. Other evaluation methods regarding total ionizing dose (TID) need to be further explored comprehensively.

Simulation of Threshold Voltage Adjustment by B+ Implantation for Pmos-Radfet Application

Threshold Voltage Adjustment of Pmos-Radiation Field-Effect Transistor with Thick Thermal Oxide

The Effect of the Boron-Ions Implantation on the Performance of RADFETs

Process optimization for random threshold voltage variation reduction in nanoscale MOSFET by 3D simulation

Increasing the Post Halo Implantation Anneal Temperature for the Effective Improvement of Threshold Voltage Roll-off Induced by the Unique Non-uniform Boron Diffusion from the Embedded Source/Drain

Threshold Shift of NMOS Transistors Due to High Energy Arsenic Source/drain Implantation

Degradation of VDMOS Under Simultaneous and Sequential Stress of Gamma Ray Irradiation and Annealing Process

A New Threshold Voltage Shift Model Due to Radiation in Fully-Depleted SOI MOSFET

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Simulating Threshold Voltage Shift of MOS Devices Due to Radiation in the Low-dose Range

Threshold Voltage Adjustment for 28nm HfOx/ZrOx/HfOx Gate Dielectric of Nmosfets Using DPN Process with Annealing Temperatures

Total Ionizing Dose Effects in 30-V Split-Gate Trench VDMOS

Novel Void Embedded Design for Total Ionizing Dose Hardening of Silicon-on-Insulator MOSFET

Evaluation of total-ionizing-dose effects on reconfigurable field effect transistors and SRAM circuits

Investigation of Irradiation Effects and Model Parameter Extraction for VDMOS Field Effect Transistor Exposed to Gamma Rays

Total Ionizing Dose Hardening of Planar SOI MOSFET through An Optimal Design Combining Embedded Void and H-gate Structures

Quantum Mechanical Effects on the Threshold Voltage of Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Two Methods of Tuning Threshold Voltage of Bulk Finfets with Replacement High-K Metal-Gate Stacks

Impact of Total Ionizing Dose Effects on the Threshold Voltage Hysteresis of SiC MOSFETs

Dynamic modeling of total ionizing dose-induced threshold voltage shifts in MOS devices