Abstract:The exceptional performance of the silicon sensors in the radiation environment has led to their extensive application in high energy physics. Even so, the future experiments foresee these sensors to be exposed to higher radiation levels. Radiation induces a change in the macroscopic properties of the sensor, thus, severely affecting the sensor performance and ultimately becoming the limiting factor for its operation. With an aim to extend the radiation hardness capabilities of the silicon sensors for the future experiments there has been a growing interest in sensors with novel designs and unique characteristic of intrinsic charge multiplication. However, it is important to understand the effect of radiation damage on these sensors, before employing them in the main detector system. The RD50 collaboration extensively employs TCAD simulation tools for an in-depth understanding and structural optimization of the newly proposed sensor technologies, complementing the measurement results. The simulation package, by the finite element method, solves the Poisson equation coupled with the current continuity equations in the main device, typically with the drift-diffusion current model. There is also the possibility of co-simulating an electronic circuit connected to the main device using the incorporated SPICE package, for example to predict single event effects or read-out related waveforms. The simulation tools also provide an insight into the sensor operation both in the non-irradiated and the irradiated scenario in order to predict the voltage dependence of the leakage current, charge collection and electrical field distribution as function of irradiation. This has required the development of a radiation damage model within the simulation tools such that the measurements are well reproduced. The details of the radiation damage modelling using two commercial TCAD tools Silvaco and Synopsys, are discussed in this work.

Performance Assessment of a New Radiation Microsensor Based 4H-SiC trench MOSFET: A Simulation Study

Direct and pulsed current annealing of p-MOSFET based dosimeter: the "MOSkin"

Extensive thermal-range simulation study of interface traps and oxide charges in an oxide-optimized MOS-capacitive radiation sensor for space applications

Radiation Damage Modelling: TCAD Simulation

Short-Circuit and Over-Current Fault Detection for SiC MOSFET Modules Based on Tunnel Magnetoresistance with Predictive Capabilities

Investigation of total ionizing dose effects in 4H-SiC power MOSFET under gamma ray radiation

TCAD Simulations of Radiation Damage in 4H-SiC

Special Degradation Effects of 60co Γ-Rays Irradiation on Electrical Parameters of SiC MOSFETs

Investigation of the Performance Degradation of 4H-SiC Neutron Detectors Using MCNP and TCAD

Simulation of Threshold Voltage Adjustment by B+ Implantation for Pmos-Radfet Application

Analyzing the Radiation Degradation of 4-Transistor Deep Submicron Technology CMOS Image Sensors

Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations

Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs

Identification of localized radiation damage in power MOSFETs using EBIC imaging

Comparison of total ionizing dose effects in SiC MOSFETs with double trench versus asymmetric trench

Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate

A Review of the Effects of Fast-Neutron Irradiation on the Performance of 4H-SiC Schottky Barrier Detectors

TCAD modeling of radiation-induced defects in 4H-SiC diodes

Performance Projection of Vacuum Gate Dielectric Doping-Free Carbon Nanoribbon/Nanotube Field-Effect Transistors for Radiation-Immune Nanoelectronics

TCAD simulations of silicon strip and pixel sensor optimization

Analysis of Displacement Damage Induced by Silicon-Ion Irradiation in SiC MOSFETs