Abstract:With the rapid development of the aviation industry, an increasing number of metal oxide semiconductor field effect transistors (MOSFETs) are being used in aerospace equipment. The total ionizing dose (TID) test has been developed for silicon power devices to evaluate their space usage capabilities. To evaluate the TID tolerance of silicon carbide (SiC) devices, two 1200V SiC MOSFET power devices with planar and trench structures were aged gamma irradiation environment, and the degradation of static properties, such as the transfer characteristics, output characteristics, and breakdown voltage were analyzed. The comparison of TID effects was made between planar and trench MOSFETs under gate bias (i.e., $\mathrm{V}_{\text{gs}} = 18$ V and $\mathrm{V}_{\text{ds}} = 0$ V) and zero bias ( $\mathrm{V}_{\text{gs}} = 0$ V and $\mathrm{V}_{\text{ds}} = 18$ V) conditions. The experimental results show that: (1) The trench MOSFET was more sensitive to TID effects, due to its unique structure and thick gate oxide. (2) The severity of TID effect under gate bias was mainly caused by the electric field within the gate oxide, which exacerbated the TID effect as compared to zero bias. (3) The degradation mechanisms of TID effect with increasing dose is illustrated, and several radiation hardening methods are proposed, including thinning the gate oxide, improving the quality of the gate oxide, and using insulating dielectrics with a wider bandgap instead of SiO2. Therefore, this work will be helpful to the explanation and radiation hardening of 1200V SiC MOSFET power devices under TID effects.

Characterization of 4H-SiC nMOSFETs in Harsh Environments, High-Temperature and High Gamma-Ray Radiation

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

Effects of Ionizing Radiation on 4H-Sic Mosfets at Cryogenic Temperature

Experimental Study of Total Ionizing Dose Effect on SiC MOSFETs at Temperature from −233 °C to 175 °C

Investigation of total ionizing dose effects in 4H-SiC power MOSFET under gamma ray radiation

Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

Comprehensive Characterization of the 4H-Sic Planar and Trench Gate MOSFETs from Cryogenic to High Temperature

Special Degradation Effects of 60co Γ-Rays Irradiation on Electrical Parameters of SiC MOSFETs

The Degradation and Recovery of 1200-V SiC MOSFET with Different Total Ionizing Doses

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures

Characterization of 4H-SiC Planar MOSFETs and Trench MOSFETs at Cryogenic and High Temperatures

Total ionizing dose effects of Co-60-& gamma; ray radiation on SiC MOSFETs with different gate oxide thickness

Total Ionizing Effects on Static Characteristics of 1200V SiC MOSFET Power Devices with Planar and Trench Structures

Temperature and Total Ionizing Dose Effects of SiC MOSFET and Their Synergistic Characteristics

Total ionizing dose effects of 60Co-γ ray radiation on SiC MOSFETs with different gate oxide thickness

Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultra-High Doses

Time-dependent dielectric breakdown of SiC-CMOS technology for harsh environments

Degradation Behavior of SiC Trench MOSFETs by Total-Ionizing-dose Irradiation under Gate Voltage Stress

High-temperature Electrical Characteristics of JBS-integrated 4H-Sic MOSFETs

Total Ionizing Dose Effects of 60co Γ-Ray Radiation on Split-Gate SiC MOSFETs