Abstract:Despite silicon carbide’s (SiC’s) high breakdown electric field, high thermal conductivity and wide bandgap, it faces certain reliability challenges when used to make conventional power device structures like power MOS-based devices, bipolar-mode diodes and thyristors, and Schottky contact-based devices operating at high temperatures. The performance and reliability issues unique to SiC discussed here include: (a) MOS channel conductance/gate dielectric reliability trade-off due to lower channel mobility as well as SiC–SiO2 barrier lowering due to interface traps; (b) reduction in breakdown field and increased leakage current due to material defects; and (c) increased leakage current in SiC Schottky devices at high temperatures.Although a natural oxide is considered a significant advantage for realizing power MOSFETs and IGBTs in SiC, devices to date have suffered from poor inversion channel mobility. Furthermore, the high interface state density presently found in the SiC–SiO2 system causes the barrier height between SiC and SiO2 to be reduced, resulting in increased carrier injection in the oxide. A survey of alternative dielectrics shows that most suffer from an even smaller conduction band offset at the SiC–dielectric interface than the corresponding Silicon–dielectric interface and have a lower breakdown field strength than SiO2. Thus, an attractive solution to reduce tunneling such as stacked dielectrics is required.In Schottky-based power devices, the reverse leakage currents are dominated by the Schottky barrier height, which is in the 0.7–1.2eV range. Because the Schottky leakage current increases with temperature, the SiC Schottky devices have a reduction in performance at high temperature similar to that of Silcon PN junction-based devices, and they do not have the high temperature performance benefit associated with the wider bandgap of SiC.Defects in contemporary SiC wafers and epitaxial layers have also been shown to reduce critical breakdown electric field, result in higher leakage currents, and degrade the on-state performance of devices. These defects include micropipes, dislocations, grain boundaries and epitaxial defects. Optical observation of PN diodes undergoing on-state degradation shows a simultaneous formation of mobile and propagating crystal stacking faults. These faults nucleate at grain boundaries and permeate throughout the active area of the device, thus degrading device performance after extended operation.

Time-dependent dielectric breakdown of SiC-CMOS technology for harsh environments

High-temperature time-dependent dielectric breakdown of 4H-SiC MOS capacitors

Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

The Gate Oxide Breakdown Failures of 4H-Sic MOS Devices

Oxide Reliability of SiC MOS Devices

Impact of Process on Gate Leakage Current and Time-Dependent Dielectric Breakdown Failure Mechanisms of 4H-SiC MOS Capacitors

Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200°C

Gate Oxide Reliability in Silicon Carbide Planar and Trench Metal-Oxide-Semiconductor Field-Effect Transistors Under Positive and Negative Electric Field Stress

Effect of High Temperature Oxidation on the Gate Oxide Reliability of SiC MOS Devices

Characterization of 4H-SiC nMOSFETs in Harsh Environments, High-Temperature and High Gamma-Ray Radiation

High Temperature Stability and the Performance Degradation of SiC MOSFETs

Reliability and performance limitations in SiC power devices

Heavy-ion induced gate damage and thermal destruction in double-trench SiC MOSFETs

Gate Oxide Long-Term Reliability of 4H-Sic Mos Devices

Gate Oxide Reliability and VTH Stability of Planar SiC MOS Technology

Influence of Pinch Effect on the Lifetime of a 2MW Silicon Carbide Photoconductive Semiconductor Switch

Temperature Sensing Elements for Harsh Environments in a 4H-SiC CMOS Technology

Gate Oxide Failure Mechanisms of SiC MOSFET Related to Electro-Thermomechanical Stress under HTRB and HTGB Test

Understanding Short-Circuit Failure Mechanism of Double-Trench SiC Power MOSFETs

Experimental and theoretical analyses of gate oxide and junction reliability for 4H-SiC MOSFET under short-circuit operation

Analysis of Gate Oxide Degradation Induced by Heavy Ion in SiC Power MOSFETs