Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200°C

P. Fiorenza,F. Cordiano,S. M. Alessandrino,A. Russo,E. Zanetti,M. Saggio,C. Bongiorno,F. Giannazzo,F. Roccaforte

2024-10-25

Abstract:The gate oxide lifetime in 4H-SiC power MOSFETs is typically assessed at fixed and constant gate bias stress, monitoring the time-dependent dielectric breakdown (TDDB).

Applied Physics

What problem does this paper attempt to address?

Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

P. Fiorenza,M. Alessandrino,B. Carbone,C. Di Martino,A. Russo,M. Saggio,C. Venuto,E. Zanetti,F. Giannazzo,F. Roccaforte

DOI: https://doi.org/10.48550/arXiv.2009.04835

2020-09-10

Applied Physics

Abstract:The origin of dielectric breakdown was studied on 4H-SiC MOSFETs that failed after three months of high temperature reverse bias (HTRB) stress. A local inspection of the failed devices demonstrated the presence of a threading dislocation (TD) at the breakdown location. The nanoscale origin of the dielectric breakdown was highlighted with advanced high-spatial-resolution scanning probe microscopy (SPM) techniques. In particular, SPM revealed the conductive nature of the TD and a local increase of the minority carrier concentration close to the defect. Numerical simulations estimated a hole concentration 13 orders of magnitude larger than in the ideal 4H-SiC crystal. The hole injection in specific regions of the device explained the failure of the gate oxide under stress. In this way, the key role of the TD in the dielectric breakdown of 4H-SiC MOSFET was unambiguously demonstrated.
Nanoscale insights on the origin of the Power MOSFETs breakdown after extremely long high temperature reverse bias stress

P. Fiorenza,M. Alessandrino,B. Carbone,C. Di Martino,A. Russo,M. Saggio,C. Venuto,E. Zanetti,C. Bongiorno,F. Giannazzo,F. Roccaforte

DOI: https://doi.org/10.48550/arXiv.2009.04846

2020-09-10

Applied Physics

Abstract:In this work, the origin of the dielectric breakdown of 4H-SiC power MOSFETs was studied at the nanoscale, analyzing devices that failed after extremely long (three months) of high temperature reverse bias (HTRB) stress. A one-to-one correspondence between the location of the breakdown event and a threading dislocation propagating through the epitaxial layer was found. Scanning probe microscopy (SPM) revealed the conductive nature of the threading dislocation and a local modification of the minority carriers concentration. Basing on these results, the role of the threading dislocation on the failure of 4H-SiC MOSFETs could be clarified.
Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

Zhenyu Wang,Yunjia Li,Xiaohua Sun,Ye Liu,Zhengyun Zhu,Na Ren,Qing Guo

DOI: https://doi.org/10.1109/WiPDAAsia49671.2020.9360249

2020-01-01

Abstract:Although the body diode of SiC MOSFET has excellent surge capability, the reliability issues about commercial SiC MOSFET under repetitive surge current stress of body diode haven't been studied thoroughly. In this work, repetitive surge current stress is applied to the body diode of commercial SiC trench MOSFET, and the surge tests are conducted under different gate biases and ambient temperatures. It is found that no bipolar degradation occurs in the body diode but degradation phenomena of gate oxide and package are observed in devices under tests (DUTs). At room temperature, the threshold voltage (VT8) related to gate oxide degradation degrades more seriously at a negative gate bias of -5V than at 0V. At 0V gate bias, gate oxide and package degenerate more severely at /25°C than at 25°C. The evolution of on-state resistance (R DSON ) during the tests is influenced by the competitive mechanism between gate oxide degradation and package degradation. As a result, gate oxide degradation causes R DSON to reduce while package degradation makes R DSON rise. Meanwhile, the competitive mechanism is deeply influenced by the gate bias voltage and ambient temperature. The failure analysis shows that all DUTs fail with gate and source terminal shorted, which is mainly attributed to high junction temperature.
4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses

Laura Anoldo,Edoardo Zanetti,Walter Coco,Alfio Russo,Patrick Fiorenza,Fabrizio Roccaforte

DOI: https://doi.org/10.3390/ma17081908

IF: 3.4

2024-04-21

Materials

Abstract:This paper presents a reliability study of a conventional 650 V SiC planar MOSFET subjected to pulsed HTRB (High-Temperature Reverse Bias) stress and negative HTGB (High-Temperature Gate Bias) stress defined by a TCAD static simulation showing the electric field distribution across the SiC/SiO2 interface. The instability of several electrical parameters was monitored and their drift analyses were investigated. Moreover, the shift of the onset of the Fowler–Nordheim gate injection current under stress conditions provided a reliable method to quantify the trapped charge inside the gate oxide bulk, and it allowed us to determine the real stress conditions. Moreover, it has been demonstrated from the cross-correlation, the TCAD simulation, and the experimental ΔVth and ΔVFN variation that HTGB stress is more severe compared to HTRB. In fact, HTGB showed a 15% variation in both ΔVth and ΔVFN, while HTRB showed only a 4% variation in both ΔVth and ΔVFN. The physical explanation was attributed to the accelerated degradation of the gate insulator in proximity to the source region under HTGB configuration.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
The Gate Oxide Breakdown Failures of 4H-Sic MOS Devices

Cai Ping Wan,Kai Yu Wang,Tian Chun Ye,Heng Yu Xu

DOI: https://doi.org/10.4028/p-x53ak2

2023-01-01

Key Engineering Materials

Abstract:A study of Weibull distribution of 4H-SiC MOS capacitors has shown the effect of temperature as well as electric-field stress on the analysis of time-dependent breakdown. Time-Dependent Dielectric Breakdown (TDDB) is strongly electric-field dependent and temperature-dependent. In the paper, the test was at the stress level of 9.5, 10, and 10.5 MV/cm under 373K, through the TDDB model, the lifetime of the SiO2 can reach more than 30 years when the field pressure is not more than 6.6 MV /cm. The acceleration factor for TDDB (using E-Model) under different temperature stress, it expected that the capacitors would last for 2.28×107 years under 3MV/cm or 54 years under 6MV/cm at 373K.
A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Mihaila, A.,Udrea, F.,Amaratunga, G.,Brezeanu, G.

DOI: https://doi.org/10.1109/SMICND.2000.890214

2000-01-01

Abstract:This paper presents a systematic analysis of breakdown mechanisms in silicon carbide MOSFET and JFET. For the MOSFET, the trench technology has been selected. The JFET structure is very similar to that having the distinctive feature of a buffer layer grown on the top of the drift region. Both devices are designed for 1.2 kV and were simulated and optimised using MEDICI and ISE TCAD software packages. This study indicates that the gate oxide breakdown puts a strong limitation on the electrical performance of the SiC trench MOSFET. Drawbacks encountered in SiC trench MOSFET, such as gate oxide breakdown, low channel mobility and the tight trade-off between the punch-through premature breakdown and the threshold voltage in the channel can be eliminated by using the SiC JFET
Impact of Process on Gate Leakage Current and Time-Dependent Dielectric Breakdown Failure Mechanisms of 4H-SiC MOS Capacitors

Guibao Wang,Bo Peng,Lei Yuan,Yuming Zhang,Renxu Jia

DOI: https://doi.org/10.1109/ted.2024.3405473

IF: 3.1

2024-06-21

IEEE Transactions on Electron Devices

Abstract:This article offers an analysis that includes both experimental and theoretical dimensions of silicon carbide (SiC)/SiO2 metal-oxide-semiconductor (MOS) capacitors. The study integrates first-principles calculations to clarify the physical failure mechanism associated with time-dependent dielectric breakdown (TDDB). Initially, by electrical characterizations of J– curves and TDDB in the two different devices, elucidating the associated physical mechanisms underlying gate reliability issues at diverse gate voltage ( ) and temperatures, which was found that elevated temperature induces a reduction in the potential barrier height, resulting in a higher tunneling current. Furthermore, to reveal the failure mechanisms of TDDB, first principles were used. It is concluded that: 1) under constant voltage, with the extension of time, the SiO2 layer will capture more electrons, and, when it reaches a certain degree, a conductive path will be formed in the gate oxygen, causing breakdown and 2) as the gate voltage increases, the electron capture rate will significantly increase, leading to a rapid reduction of the breakdown time of the SiO2 gate oxide layer.

engineering, electrical & electronic,physics, applied
Gate Oxide Reliability in Silicon Carbide Planar and Trench Metal-Oxide-Semiconductor Field-Effect Transistors Under Positive and Negative Electric Field Stress

Limeng Shi,Jiashu Qian,Michael Jin,Monikuntala Bhattacharya,Shiva Houshmand,Hengyu Yu,Atsushi Shimbori,Marvin H. White,Anant K. Agarwal

DOI: https://doi.org/10.3390/electronics13224516

IF: 2.9

2024-11-27

Electronics

Abstract:This work investigates the gate oxide reliability of commercial 1.2 kV silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) with planar and trench gate structures. The performance of threshold voltage (Vth) and gate leakage current (Igss) in SiC MOSFETs is evaluated under positive and negative gate voltage stress. The oxide lifetimes of SiC planar and trench MOSFETs at 150 °C are measured using constant voltage Time-Dependent Dielectric Breakdown (TDDB) testing. From the test results, it is found that electron trapping and hole trapping in SiO2 caused by oxide electric field (Eox) stress affect the Vth of SiC MOSFETs. The saturation and turnaround behavior of the Vth shift during positive and negative gate voltage stresses indicates that the influence of charge trapping in the gate oxide varies with stress time. The Igss under positive and negative gate voltages depends on the tunneling barrier height for electrons and holes, respectively, which can be calculated using the Fowler–Nordheim (FN) tunneling mechanism. Moreover, the presence of near-interface traps (NITs) affects the barrier height for holes under negative gate voltages. The behavior of Vth shift and Igss under high-temperature gate bias reflects the charge trapping occurring in different regions of the gate oxide. In addition, compared to SiC planar MOSFETs, SiC trench MOSFETs with thicker gate oxide tend to exhibit higher lifetimes in TDDB tests.

engineering, electrical & electronic,computer science, information systems,physics, applied
A Decrease in TDDB Lifetime of Commercial SiC Power MOSFETs under Repetitive Unclamped Inductive Switching Stresses

Sheng Yang,Haonan Feng,Xuefeng Yu,Xinnan Lin

DOI: https://doi.org/10.1109/sslchinaifws57942.2023.10070979

2022-01-01

Abstract:The degradation behavior under repetitive unclamped inductive switching stresses on the subsequent time-dependent dielectric breakdown (TDDB) of commercial SiC power MOSFETs are investigated. It is reported that repeated avalanche stresses can cause changes, including Vth (the threshold voltage) and Ron (on-state resistance) but not Igss (gate leakage current). However, the results show a significant decrease in the TDDB lifetime after 180k avalanche cycles, which suggests the degradation of the gate oxide. We attribute these results to defects at the SiC/SiO2 interface, which are caused by hot hole injection and trapping into the gate oxide above the channel and JFET region. The subthreshold curve analysis reveals that the density of the interface states changes during aging experiments, which further confirms our view. Meanwhile, interface states should be responsible for the increase in Ron, which was different from the previously research.
High-temperature time-dependent dielectric breakdown of 4H-SiC MOS capacitors

Xinlan Hou,Runding Luo,Qibin Liu,Yanqing Chi,Jie Zhang,Hongping Ma,Qingchun Zhang,Jiajie Fan

DOI: https://doi.org/10.1016/j.csite.2024.105371

IF: 6.268

2024-11-07

Case Studies in Thermal Engineering

Abstract:—With the rapid applications of silicon carbide metal–oxide–semiconductor field-effect transistor (SiC MOSFET) power devices, further improving the performance of SiC MOSFET device through enhancing its gate oxide reliability is one of the crucial directions. The density of interface states in a SiC MOSFET is a significant parameter that affects the reliability of the gate oxide layer. In this paper, the SiC MOS capacitors (MOSCAPs) were prepared by the 1250 °C dry oxidation and 1350 °C NO annealing process. Then, we analyzed the mechanisms of the breakdown by two group of ramped experiment. And we still evaluated the reliability of oxide layer via the high-temperature time-dependent dielectric breakdown (TDDB) tests on the prepared MOSCAPs, meanwhile, the temperature effect on the reliability was considered. Furthermore, the E , 1/ E , and E models with Weibull plotting were used to calculate the t BD lifetimes and failure analysis was carried on the failed samples finally. The results indicate that: (1) the impact of the generation and accumulation of the traps in the oxide, which is the main mechanisms of device failure; (2) The prediction of lifetime was calculated with three models at different acceleration factors; (3) at high-temperature, although the lower the density of interface states is, the Si epitaxial growth and C cluster will manifest in the oxide surface and lead to the breakdown of SiC MOSCAPs.

thermodynamics
Deep Understanding of Negative Gate Voltage Restriction for SiC mosfet Under Wide Temperature Range

Ximing Chen,Xuan Li,Bangbing Shi,Junmiao Xiang,Yuanzhuo Dai,Chenzhan Li,Xiaochuan Deng,Haihui Luo,Yudong Wu,Bo Zhang

DOI: https://doi.org/10.1109/tpel.2021.3056435

IF: 5.967

2021-08-01

IEEE Transactions on Power Electronics

Abstract:In this letter, the origin and related physical insights of gate reliability issues under various Vgs and high temperatures (up to 300 °C) are revealed in-depth, through splitting MOS gate structure of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) into N-type JFET and P-type channel region under identical manufacturing processes and thermal budgets of SiC MOSFETs. From 25 to 300 °C, the safety limit of positive Vgs of SiC MOSFETs is mainly dependent on the gate oxide on the JFET surface, whereas that of negative Vgs is dependent on the gate oxide on the channel surface. The gate oxide on the channel surface is weaker than that on the JFET surface in terms of Fowler–Nordheim (F-N) tunneling, resulting in asymmetric safety Vgs of current SiC MOSFET. Moreover, when temperature ranges from 25 to 150 °C, the degradation of gate oxide under −15 V < Vgs < 25 V is caused by the hole or electron direct tunneling mechanism. However, when the temperature reaches 300 °C, the degradation of gate oxide under −5 V < Vgs < 10 V is caused by the hole or electron hopping conduction mechanism. Furthermore, the reliability of gate oxide is evaluated by the time-dependent dielectric breakdown measurement. The charge-to-breakdown (QBD) of gate oxide is severely degraded -t 300 °C mainly due to the barrier height (${it{ Phi}}_{rm B}$) degradation. These efforts can provide accurate weakness points of gate oxide under higher Vgs bias (particular for negative bias) and higher temperature (300 °C) for SiC MOSFETs, further helping use and design rugged converters with the fast-speed operation of SiC MOSFETs.

engineering, electrical & electronic
Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

Liangchun C. Yu,Greg T. Dunne,Kevin S. Matocha,Kin P. Cheung,John S. Suehle,Kuang Sheng

DOI: https://doi.org/10.1109/tdmr.2010.2077295

IF: 1.886

2010-01-01

IEEE Transactions on Device and Materials Reliability

Abstract:The wide-bandgap nature of silicon carbide (SiC) makes it an excellent candidate for applications where high temperature is required. The metal-oxide-semiconductor (MOS)-controlled power devices are the most favorable structure; however, it is widely believed that silicon oxide on SiC is physically limited, particularly at high temperatures. Therefore, experimental measurements of long-term reliability of oxide at high temperatures are necessary. In this paper, time-dependent dielectric-breakdown measurements are performed on state-of-the-art 4H-SiC MOS capacitors and double-implanted MOS field-effect transistors (DMOSFET) with stress temperatures between 225°C and 375°C and stress electric fields between 6 and 10 MV/cm. The field-acceleration factor is around 1.5 dec/(MV/cm) for all of the temperatures. The thermal activation energy is found to be ~ 0.9 eV, independent of the electric field. The area dependence of Weibull slope is discussed and shown to be a possible indication that the oxide quality has not reached the intrinsic regime and further oxide-reliability improvements are possible. Since our reliability data contradict the widely accepted belief that silicon oxide on SiC is fundamentally limited by its smaller conduction-band offset compared with Si, a detailed discussion is provided to examine the arguments of the early predictions.
Time-dependent dielectric breakdown of SiC-CMOS technology for harsh environments

Masahiro Masunaga,Yoshitaka Sasago,Yuki Mori,Digh Hisamoto

DOI: https://doi.org/10.1063/5.0184689

IF: 4

2024-01-22

Applied Physics Letters

Abstract:To estimate the failure time of silicon carbide (SiC) integrated circuits in harsh environments, the activation energy (Ea) and field acceleration factor of SiC n-channel MOS (nMOS) and p-channel MOS (pMOS) were measured using time-dependent dielectric breakdown testing at constant voltage stress in the range of 25–350 °C. Ea around 300 °C was 0.7 eV for nMOS and 0.66 eV for pMOS, which was about twice as high as that below 150 °C and did not differ greatly depending on the conductivity type. The gate dielectric breakdown mechanism shifted from the 1/E model to the E model as the temperature rose, and this is thought to have caused the Ea to change. The field acceleration factor in the E model at 300 °C was 2.7 and 2.3 cm/MV for nMOS and pMOS, respectively. The maximum operating electric fields of nMOS and pMOS for a 100-year lifetime are 6.8 and −7.2 MV/cm, which are over 25% lower than the fields at room temperature, mainly due to a shift in the dominant breakdown model. A more conservative failure time design will be required for SiC-ICs exposed to high temperatures.

physics, applied
Positive Bias Temperature Instability in SiC-Based Power MOSFETs

Vladislav Volosov,Santina Bevilacqua,Laura Anoldo,Giuseppe Tosto,Enzo Fontana,Alfio-Lip Russo,Claudio Fiegna,Enrico Sangiorgi,Andrea Natale Tallarico

DOI: https://doi.org/10.3390/mi15070872

2024-06-30

Abstract:This paper investigates the threshold voltage shift (ΔVTH) induced by positive bias temperature instability (PBTI) in silicon carbide (SiC) power MOSFETs. By analyzing ΔVTH under various gate stress voltages (VGstress) at 150 °C, distinct mechanisms are revealed: (i) trapping in the interface and/or border pre-existing defects and (ii) the creation of oxide defects and/or trapping in spatially deeper oxide states with an activation energy of ~80 meV. Notably, the adoption of different characterization methods highlights the distinct roles of these mechanisms. Moreover, the study demonstrates consistent behavior in permanent ΔVTH degradation across VGstress levels using a power law model. Overall, these findings deepen the understanding of PBTI in SiC MOSFETs, providing insights for reliability optimization.
Ionization Radiation-Induced Reliability Degradation of SiC Power MOSFET

Yiping Xiao,Chaoming Liu,Yanqing Zhang,Chunhua Qi,Guoliang Ma,Tianqi Wang,Mingxue Huo

DOI: https://doi.org/10.1109/ted.2023.3324281

IF: 3.1

2023-01-01

IEEE Transactions on Electron Devices

Abstract:The long-term reliability of SiC power MOSFETs under total ionizing dose (TID) effects was investigated in this article. Time-dependent dielectric breakdown (TDDB) test showed that the degradation behavior of the gate leakage current is dependent on the bias voltage. At a critical gate bias of 43.5 V, the gate leakage current first increases and then decreases before oxide breakdown. In this case, the effects of hole trapping, interface trap depassivation, as well as electron trapping during Fowler–Nordheim (FN) tunneling occur sequentially within the oxide, as described by the composite model. After total dose radiation, the oxide breakdown time is markedly reduced, while the leakage current degradation pattern remains unchanged. This is attributed to radiation-induced oxide trapped charges and additional acceptor-type defects, which modulate the oxide electric field and alter the FN tunneling barrier.
Gate Oxide Failure Mechanisms of SiC MOSFET Related to Electro-Thermomechanical Stress under HTRB and HTGB Test

Min Ren,Shiqi Liang,Tong Zhou,Hang Gu,Wei Gao,Meng Pi,Yuting Tang,Zhihai Liu,Zehong Li,Xinkai Guo,Maozhou Dai,Bo Zhang

DOI: https://doi.org/10.1109/ispsd59661.2024.10579620

2024-01-01

Abstract:Reliability issues with the gate oxide remain a significant obstacle to the widespread application of SiC MOSFET devices. This work reveals the gate oxide failure of SiC MOSFETs not only related to gate oxide defects and high electric fields but also to thermomechanical stress. During the High Temperature Reverse Bias (HTRB) and High Temperature Gate Bias (HTGB) tests, the unique structure of the MOSFET device cells and gate pad transition region experiences concentrated thermomechanical stress at high temperatures, as the mismatch in coefficient of thermal expansion (CTE) between SiC/SiO 2 and Poly-Si/SiC leads to more pronounced stress concentration, resulting in gate oxide failure in these areas. In the HTGB test, the high electric field in the gate oxide accelerates the failure process in conjunction with thermomechanical stress. By optimizing the layout pattern and process, the mechanical stress at the failure point was reduced by 56.5%, and the optimized devices passed 1000 hours of HTRB and HTGB testing.
Gate Oxide Reliability and VTH Stability of Planar SiC MOS Technology

Martin Domeij,Jimmy Franchi,Sotirios Maslougkas,Peter Moens,Jan Lettens,Jake Choi,Fredrik Allerstam

DOI: https://doi.org/10.4028/p-95van7

2022-06-01

Materials Science Forum

Abstract:Publication date: 31 May 2022 Source: Materials Science Forum Vol. 1062 Author(s): Martin Domeij, Jimmy Franchi, Sotirios Maslougkas, Peter Moens, Jan Lettens, Jake Choi, Fredrik Allerstam Similar charge to failure distributions with mean values of about 50 C/cm2 were measured for planar SiC MOSFETs and MOS capacitors. Fast occurring and saturating negative flatband and threshold voltage drops were found in time resolved 1 second long pulsed gate current stress with IG=1 mA/cm2 at T=150 °C. No substantial difference in VTH drift rate with VGS=28 V at T=150 °C was found after about 10 s recovery period for IG stressed devices compared with unstressed devices. Additionally, IG stressed and unstressed devices did not differ in final VTH shift at T=25 °C after VGS=28 V stress (during 3 hrs or 31 hrs). More gate oxide reliability characterization is important to determine if 1 mA/cm2 pulsed gate current stress creates any permanent changes to the SiC MOSFET device behaviour. Additionally, parametric shifts in VTH and RDSon was examined after long-term AC gate bias stress by a gate driver switching between-8V and 20V for four different commercially available SiC MOSFETs.
Comprehensive Investigation of Gate Oxide Instability in 4H-SiC MOSFETs and MOS Capacitors Under High Gate Bias Stress

Haonan Chen,Kanghua Yu,Jieqin Ding,Chengzhan Li,Jun Wang,Yuwei Wang

DOI: https://doi.org/10.1109/ted.2023.3294458

IF: 3.1

2023-01-01

IEEE Transactions on Electron Devices

Abstract:In this article, gate oxide instability of 4H-SiC MOSFETs along with the n-type junction field effect transistor (JFET) and p-type channel capacitors fabricated under identical manufacturing process and thermal budget is simultaneously investigated under high gate bias stress. The degradation phenomena and the corresponding trapping mechanism of the three kinds of devices are comprehensively analyzed and compared with each other. Notably, the amount of charge injected into the gate oxide ( $\textit{Q}_{\textit{s}}\text{)}$ is used as a criterion to evaluate the shift of threshold voltage ( $\textit{V}_{\text{TH}}\text{)}$ and flat-band voltage ( $\textit{V}_{\text{FB}}\text{)}$ during stress. The measured $\Delta \textit{V}_{\text{TH}}$ in 4H-SiC MOSFETs shows a strong linear relationship with $\textit{Q}_{\textit{s}}$ , regardless of the value and polarity of the applied $\textit{E}_{\text{OX}}$ , whereas $\Delta \textit{V}_{\text{FB}}$ in capacitors is with a distinct behavior, demonstrating obvious saturation at high $\textit{Q}_{\textit{s}}$ and a significant difference under various stress condition. All these results provide deeper insight into the study of gate oxide instability in 4H-SiC MOS devices.

engineering, electrical & electronic,physics, applied
Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions

H. Bencherif,F. Pezzimenti,L. Dehimi,F. G. Della Corte

DOI: https://doi.org/10.1007/s00339-020-03850-6

2020-10-13

Applied Physics A

Abstract:In this work, the reliability of different oxide/4H-SiC interfaces under high temperature and carrier-trapping conditions are investigated carefully. In more detail, the carrier-trapping and temperature effects are considered in the electrical characterization of a low breakdown 4H-SiC-based MOSFET by using in turn SiO2, Si3N4, AlN, Al2O3, Y2O3 and HfO2 as gate dielectric. A gate oxide with a high relative permittivity notably improves the transistor performance. In addition, HfO2 assures the MOSFET best immunity behaviors. The obtained results are explained in terms of the carrier channel mobility, device on-state resistance, and oxide electric field. By using HfO2, however, an increased gate leakage current is calculated. This drawback is overcome by inserting a thin interfacial layer (2 nm-thick) in the HfO2/4H-SiC MOS structure. In particular, two alternative gate stacked dielectrics, involving either SiO2 or Al2O3, have proven their effectiveness in preserving the transistor on-state figures of merit while limiting the gate leakage current in the whole explored gate voltage range. To support the prediction capabilities of the presented modeling analysis, the simulations results are compared with experimental data from literature resulting in a good agreement. Low power MOSFETs are used in several applications for which reliability and durability are as critical as performance. For example, referring to power optimizers for photovoltaic (PV) modules, which fall under the low-load and low-voltage category of DC–DC converters, these devices significantly increase the energy generated by each single PV module operating under harsh conditions and stressing environments. In addition, they have to ensure high reliability over the long term of operation.
Degradation of 4H-Sic Trench MOSFET under Single and Repetitive Short-Circuit Stress

Yuan Zou,Jue Wang,Li Liu,Hongyi Xu,Hengyu Wang,Kuang Sheng

DOI: https://doi.org/10.1109/sslchinaifws54608.2021.9675237

2021-01-01

Abstract:It is well known that despite the superior performance of SiC MOSFETs, reliability issues persist and limit their development. In this work, short-circuit (SC) stresses have been applied to commercial SiC trench MOSFETs to verify their reliability under extreme conditions. First, a single-pulse SC stress was applied to the device. Two different short-circuit failure mechanisms were identified. One type of failure was thermal runaway and the other was gate failure. Subsequently, multiple non-destructive short-circuit pulses have been applied to the device. After the stress, the shift in the device static characteristics has been measured and recorded to determine the effects of the stress on the degradation of the device's electrical parameters. Finally, TCAD device simulations have been used to help understand the intrinsic degradation mechanism.

Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200°C

Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

Nanoscale insights on the origin of the Power MOSFETs breakdown after extremely long high temperature reverse bias stress

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses

The Gate Oxide Breakdown Failures of 4H-Sic MOS Devices

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Impact of Process on Gate Leakage Current and Time-Dependent Dielectric Breakdown Failure Mechanisms of 4H-SiC MOS Capacitors

Gate Oxide Reliability in Silicon Carbide Planar and Trench Metal-Oxide-Semiconductor Field-Effect Transistors Under Positive and Negative Electric Field Stress

A Decrease in TDDB Lifetime of Commercial SiC Power MOSFETs under Repetitive Unclamped Inductive Switching Stresses

High-temperature time-dependent dielectric breakdown of 4H-SiC MOS capacitors

Deep Understanding of Negative Gate Voltage Restriction for SiC mosfet Under Wide Temperature Range

Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

Time-dependent dielectric breakdown of SiC-CMOS technology for harsh environments

Positive Bias Temperature Instability in SiC-Based Power MOSFETs

Ionization Radiation-Induced Reliability Degradation of SiC Power MOSFET

Gate Oxide Failure Mechanisms of SiC MOSFET Related to Electro-Thermomechanical Stress under HTRB and HTGB Test

Gate Oxide Reliability and VTH Stability of Planar SiC MOS Technology

Comprehensive Investigation of Gate Oxide Instability in 4H-SiC MOSFETs and MOS Capacitors Under High Gate Bias Stress

Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions

Degradation of 4H-Sic Trench MOSFET under Single and Repetitive Short-Circuit Stress