Abstract:This work investigates the gate oxide reliability of commercial 1.2 kV silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) with planar and trench gate structures. The performance of threshold voltage (Vth) and gate leakage current (Igss) in SiC MOSFETs is evaluated under positive and negative gate voltage stress. The oxide lifetimes of SiC planar and trench MOSFETs at 150 °C are measured using constant voltage Time-Dependent Dielectric Breakdown (TDDB) testing. From the test results, it is found that electron trapping and hole trapping in SiO2 caused by oxide electric field (Eox) stress affect the Vth of SiC MOSFETs. The saturation and turnaround behavior of the Vth shift during positive and negative gate voltage stresses indicates that the influence of charge trapping in the gate oxide varies with stress time. The Igss under positive and negative gate voltages depends on the tunneling barrier height for electrons and holes, respectively, which can be calculated using the Fowler–Nordheim (FN) tunneling mechanism. Moreover, the presence of near-interface traps (NITs) affects the barrier height for holes under negative gate voltages. The behavior of Vth shift and Igss under high-temperature gate bias reflects the charge trapping occurring in different regions of the gate oxide. In addition, compared to SiC planar MOSFETs, SiC trench MOSFETs with thicker gate oxide tend to exhibit higher lifetimes in TDDB tests.

The Gate Oxide Breakdown Failures of 4H-Sic MOS Devices

High-temperature time-dependent dielectric breakdown of 4H-SiC MOS capacitors

Impact of Process on Gate Leakage Current and Time-Dependent Dielectric Breakdown Failure Mechanisms of 4H-SiC MOS Capacitors

Gate Oxide Long-Term Reliability of 4H-Sic Mos Devices

Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

Time-dependent dielectric breakdown of SiC-CMOS technology for harsh environments

Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200°C

Effect of High Temperature Oxidation on the Gate Oxide Reliability of SiC MOS Devices

GHz AC to DC TDDB Modeling with Defect Accumulation Efficiency Model

Oxide Reliability of SiC MOS Devices

The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection

Lifetime of thin oxide and oxide-nitride-oxide dielectrics within trench capacitors for DRAMs

Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs

Gate Oxide Reliability in Silicon Carbide Planar and Trench Metal-Oxide-Semiconductor Field-Effect Transistors Under Positive and Negative Electric Field Stress

Reliability Investigation of 4H-Sic MOSFET Based on TCAD Simulation

A Comprehensive Analysis of Unclamped-Inductive-Switching-Induced Electrical Parameter Degradations and Optimizations for 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistor Structures

Gate Oxide Failure Mechanisms of SiC MOSFET Related to Electro-Thermomechanical Stress under HTRB and HTGB Test

Reliability of 4H-Sic (0001) MOS Gate Oxide by NO Post-Oxide-Annealing

Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

Oxide Breakdown Reliability of SiC MOSFET

A Decrease in TDDB Lifetime of Commercial SiC Power MOSFETs under Repetitive Unclamped Inductive Switching Stresses