Abstract:Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) has superior performances in terms of high switching frequency and low power loss, but its widespread applications in markets have been partly hindered by its ruggedness and reliability. Overcurrent operation is a common phenomenon which causes overheat of power devices and further leads to degradation or even device failures in power electronic systems. However, in- depth degradation mechanism and limiting factors of repetitive overcurrent capability have not been comprehensively studied yet. In this article, we investigated the conduction and the switching overcurrent stress separately to figure out the roles of each operation processes in the degradation of 1.2-kV SiC planar-gate MOSFETs for the first time. It is observed that the conduction overcurrent stress causes a positive shift of threshold voltage, while the switching overcurrent stress leads to a negative shift of threshold voltage as well as larger gate leakage current. Electrons captured at the SiC/SiO2 interface may be the reason for the positive shift of threshold voltage, while the negative shift of threshold voltage may be due to the injection and accumulation of the holes into the gate oxide at JFET and near-channel region. Both experimental results and simulation analysis show that the switching overcurrent stress plays a major role in the degradation of 1.2-kV SiC planar-gate MOSFETs under repetitive overcurrent stress. In addition, the influence of major limiting factors, including overcurrent level, overcurrent duration, and drain–source voltage, is also investigated to evaluate the reliability of SiC planar-gate MOSFETs under different overcurrent conditions, which will provide a useful guidance for dedicated design and utilization of SiC MOSFETs.

Oxide Breakdown Reliability of SiC MOSFET

Oxide Reliability of SiC MOS Devices

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

Gate Oxide Reliability in Silicon Carbide Planar and Trench Metal-Oxide-Semiconductor Field-Effect Transistors Under Positive and Negative Electric Field Stress

Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs

Gate Oxide Long-Term Reliability of 4H-Sic Mos Devices

Gate Oxide Degradation of SiC MOSFET in Switching Conditions

Exploring High-Temperature Reliability of 4H-SiC MOSFETs: A Comparative Study of High-K Gate Dielectric Materials

Analysis of Gate Oxide Degradation Induced by Heavy Ion in SiC Power MOSFETs

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Gate Oxide Reliability and VTH Stability of Planar SiC MOS Technology

Investigation on the Degradation Mechanism for SiC Power MOSFETs Under Repetitive Switching Stress

High-temperature time-dependent dielectric breakdown of 4H-SiC MOS capacitors

Review and analysis of SiC MOSFETs’ ruggedness and reliability

Degradation Behavior and Defect Analysis for SiC Power MOSFETs Based on Low-Frequency Noise Under Repetitive Power-Cycling Stress

Design Optimization and Reliability Evaluation in 1.2 kV SiC Trench MOSFET with Deep P Structure

Understanding the Degradation of 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Over-load Current Stress

Investigations on the Degradation of 1.2-Kv 4H-Sic Mosfets under Repetitive Short-Circuit Tests

Understanding Short-Circuit Failure Mechanism of Double-Trench SiC Power MOSFETs

Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison between Planar-Gate and Trench-Gate Structures