Abstract:As the device size continues to shrink, the gate oxygen layer in MOS devices continues to become thinner, which leads to problems such as increased leakage current in conventional Si MOS devices. SiC, an important semiconductor material used in high-power devices, is not immune to the problem of premature breakdown due to the gate oxygen layer. Based on this, this paper adopts the innovative approach of replacing the conventional SiO 2 as the gate oxygen layer with the high-k material, hafnium dioxide (HfO 2 ), and continues the in-depth study on the electrical characteristics of the gate oxygen structure. In this paper, hafnium dioxide (HfO 2 ) thin films were deposited on SiC and Si substrates using the atomic layer deposition(ALD) method. The metal-insulated semiconductor (MIS) structures with Al as the upper and lower electrodes were prepared, and the leakage currents and breakdown voltage characteristics of the MOS capacitors on the two different substrates were investigated. The leakage current density of the MOS capacitor structure with SiC substrate is 10 -11 A/cm 2 ,and the breakdown voltage is about 32 V. Based on the capacitance-voltage (C-V) measurements, the frequency dependence of the movable charge at the interface of the MOS capacitor structure is investigated. The lowest interfacial defect density (D it ) of the MOS capacitive structure with SiC substrate is only of the order of 10 10 eV -1 cm -2 , while the movable charge N eff of the oxide layer of this sample is also controlled to the order of 10 13 cm -2 . It is worth mentioning that the HfO 2 /SiC structure performs better than the HfO 2 /Si structure in these electrical parameters, and the sample designed in this paper also performs better in electrical parameters than previous studies. These results undoubtedly demonstrate that the combination of High-k material (HfO 2 ) and SiC in the MOS gate oxygen layer is a promising research topic.

Exploring High-Temperature Reliability of 4H-SiC MOSFETs: A Comparative Study of High-K Gate Dielectric Materials

Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions

Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

Numerical Analysis of 4H-SiC MOSFET Design Including High-k Gate Dielectrics for Power electronic Applications

Oxide Reliability of SiC MOS Devices

An Investigation into the $HfO_2/Si$ Interface: Materials Science Challenges and their Effects on MOSFET Device Performance

Electrical Characterization of HfO2/4H-SiC and HfO2/Si MOS Structures

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Improving the reliability of MOS capacitor on 4H-SiC (0001) with phosphorus diffused polysilicon gate

Improved device characteristics obtained in 4H-SiC MOSFET using high-k dielectric stack with ultrathin SiO2-AlN as interfacial layers

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

Gate Oxide Failure Mechanisms of SiC MOSFET Related to Electro-Thermomechanical Stress under HTRB and HTGB Test

Scalability And Reliability Characteristics Of Cvd Hfo2 Gate Dielectrics With Hfn Electrodes For Advanced Cmos Applications

Gate Oxide Reliability in Silicon Carbide Planar and Trench Metal-Oxide-Semiconductor Field-Effect Transistors Under Positive and Negative Electric Field Stress

Gate Oxide Long-Term Reliability of 4H-Sic Mos Devices

Design and Simulation on Improving the Reliability of Gate Oxide in SiC CDMOSFET

Oxide Breakdown Reliability of SiC MOSFET

Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations

Investigation on gate oxide reliability under gate bias screening for commercial SiC planar and trench MOSFETs

High-K Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Oxide Lifetime (ttddb≥ 104s), and High Thermal Stability (≥ 800 °C)

Experimental and theoretical analyses of gate oxide and junction reliability for 4H-SiC MOSFET under short-circuit operation