Abstract:NO post-oxidation annealing (POA) processes with different temperatures and durations are simultaneously studied on the n-type and p-type 4H-SiC MOS capacitors. The results from Secondary Ion Mass Spectroscopy (SIMS) reveal that nitrogen diffuses further into the SiO2 layer for the samples annealed at higher temperature (1250 °C). Furthermore, the area densities of nitrogen for the n-type samples are about 1.3 times larger than the p-type samples. The densities of negative effective fixed dielectric charge (Neff) and slow-state electron traps are effectively decreased with increasing annealing time and temperature for the n-type samples. However, the introduced nitrogen leads to more the deep energy-level traps [0.5–0.6 eV above the valence band edge (Ev)] in the p-type samples, which can exchange electrons with near-interface traps in response to the alternating current (AC) signal below 10 kHz. Besides, the densities of the slow-state hole traps, which are obviously increased at low temperature but raised slowly at high temperature, are mainly affected by the temperature of the NO POA process and not only the density of incorporated nitrogen. Therefore, NO annealing at high temperature with a short duration (at 1250 °C 1 h) may be a good choice to optimize NO POA treatment for n-channel 4H-SiC MOSFETs, based on comprehensive consideration of the influence of different NO POA conditions on n-type and p-type MOS capacitors.

Reliability of 4H-Sic (0001) MOS Gate Oxide by NO Post-Oxide-Annealing

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Effect of Post Oxidation Annealing in Nitric Oxide on Interface Properties of 4H-Sic/sio2 after High Temperature Oxidation

The Correlation Between the Reduction of Interface State Density at the SiO2/SiC Interface and the NO Post-Oxide-Annealing Conditions

Effect of High Temperature Oxidation on the Gate Oxide Reliability of SiC MOS Devices

Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

Influence of Various NO Annealing Conditions on N-type and P-type 4H-Sic MOS Capacitors

High-temperature time-dependent dielectric breakdown of 4H-SiC MOS capacitors

Nitridation of Metalorganic-Chemical-VaporDeposited Al 2 O 3 Gate Dielectrics by NH 3 Annealing

The Effect of Diluted N2O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor

Effects of sequential annealing in low oxygen partial-pressure and NO on 4H-SiC MOS devices

Ultrahigh-temperature Oxidation of 4H-Sic (0 0 0 1) and Gate Oxide Reliability Dependence on Oxidation Temperature

Oxide Reliability of SiC MOS Devices

Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO

Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

Gate Oxide Long-Term Reliability of 4H-Sic Mos Devices

The Effect on the Interface and Reliability of SiC MOS by Ar/O<sub>2</sub> Annealing

Influence of Post-Ion-Implantation Annealing Temperature on the Characteristics of Gate Oxide on 4H Silicon Carbide

Interface Properties Study on SiC MOS with High-Κ Al2O3 Gate Dielectric

Growth of Gate Oxides on 4H–SiC by NO at Low Partial Pressures

Improvement of Interface Properties for Thermally Oxidized SiC/SiO2 MOS Capacitor by Post Oxidation Annealing Treatment