Abstract:In this study, Al implantation in 4H-SiC at the dose of 1 × 10 14 cm −2 was investigated. The impacts of implantation temperature on the lattice quality, microstructure, surface composition, and band structure were all studied experimentally and theoretically. Atomic force microscope (AFM) images showed the difference in surface morphology between high-temperature and low-temperature implantation. Transmission electron microscopy (TEM) characterization indicated the lattice damage induced by implantation was recovered after the post-annealing at 1750 °C, except for the samples implanted at room temperature. X-ray photoelectron spectroscopy (XPS) analysis suggested an oxidation effect during and after the implantation process, and it was more serious at lower implantation temperatures. As the implantation temperature incremented, the ratio of Si-C composition with high binding energy increased, the element valence became closer to that of ideal Al-doped 4H-SiC calculated by density functional theory (DFT); and the Fermi level shifted toward the valence band maximum (VBM), demonstrating the formation of efficient p-type doping. A more obvious asymmetric broadening in Raman spectroscopy was observed at higher implantation temperature. The theoretically obtained band structures and bond lengths from DFT calculations corroborated the experimental results, providing physical insights into the possible effect mechanism. In sum, correlations between the implantation process, external material properties, and internal crystal structure were recorded, paving the way for further research and future applications.

Influence of Post-Ion-Implantation Annealing Temperature on the Characteristics of Gate Oxide on 4H Silicon Carbide

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Studies of defect states in the interface between SiO2 and a-Si:H films

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Annealing Influence on Stoichiometry and Band Alignment of 4H-SiC/SiO2 Interface Evaluated by X-ray Photoelectron Spectroscopy

Effect of annealing on interfacial and band alignment characteristics of HfO 2/SiO 2 gate stacks on Ge substrates

The Effect of Diluted N2O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations

Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H–SiC

Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics

Effect of Temperature-Dependent Low Oxygen Partial Pressure Annealing on SiC MOS

Insights into the effects of Al-ion implantation temperature on material properties of 4H-SiC

Improvement of Interface Properties for Thermally Oxidized SiC/SiO2 MOS Capacitor by Post Oxidation Annealing Treatment

Effects of Composition and Thermal Annealing on the Mechanical Properties of Silicon Oxycarbide Films

Annealing Effect on the Metal Gate Effective Work Function Modulation for the Al/TiN/SiO2/p-Si Structure

Interface Properties Study on SiC MOS with High-Κ Al2O3 Gate Dielectric

Oxide Reliability of SiC MOS Devices

Electrical evaluation of high-temperature effects on gate oxide integrity in a self-aligned CoSi2 MOS process

Thermal Annealing Effects on a Compositionally Graded SiGe Layer Fabricated by Oxidizing a Strained SiGe Layer

Influence of vacuum annealing on interface properties of SiC (0001) MOS structures