Abstract:The threshold voltage ( ${V}_{t}$ ) lowering induced by increasing Ti-silicidation anneal temperature is revealed for FinFET with TiAl based metal gate. It is demonstrated that increasing Ti-silicidation anneal temperature by 50 °C can result in significant reduction of ${V}_{t}$ for both n- and p-FinFET. The change of ${V}_{t}$ is found to be related to the deoxidation of Ti, the segregation of O, and the oxidation of Al in TiN/TiAl/TiN/TaN stack. A new effective work function (EWF) tuning model is then proposed, in which it suggests that the EWF is determined by two factors. One is the formation of metallic Ti or TiC in the middle part of the C-rich TiAl layer, and the other is the formation of metallic Ti in C-free TiN layer lying between TiAl and TaN. The formation of metallic Ti or TiC with a lower EWF than TiAl(O) or TiN will result in the reduction of ${V}_{t}$ . Since the formed metallic Ti in TiN layer lying between TiAl and TaN is much closer to HfO 2 layer than the formed metallic Ti or TiC in the middle part of TiAl, it can have more significant impact on ${V}_{t}$ tuning. However, it is revealed that as the TiN layer lying between TiAl and TaN becomes thicker, the diffusion of Al from TiAl into TiN will be suppressed. Correspondingly, the formation of metallic Ti in TiN layer is suppressed too due to the lack of Al atoms, which can extract O atoms from TiO x in TiN layer. Since the deoxidation, oxidation and diffusion progress are sensitive to process time, extending the soak anneal time of Ti-silicidation process is demonstrated to be an effective way to stabilize ${V}_{t}$ .

Annealing Effect on the Metal Gate Effective Work Function Modulation for the Al/TiN/SiO2/p-Si Structure

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Work function modulation for TiN/Ta/TiN metal gate electrode

Nitridation of Metalorganic-Chemical-VaporDeposited Al 2 O 3 Gate Dielectrics by NH 3 Annealing

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Effect of Dimethylaluminumhydride-Derived Aluminum Oxynitride Passivation Layer on the Interface Chemistry and Band Alignment of HfTiO-InGaAs Gate Stacks

Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

Modification of optical and electrical properties of sol-gel-derived TiO2-doped ZrO2 gate dielectrics by annealing temperature

Comparison of Microstructure and Electrical Characteristics of Sputtering-Derived HfGdO/HfTiO and HfTiO/HfGdO Gate Stacks

Modulation of the effective work function of TiN metal gate for PMOS application

Fermi Level Pinning in Metal/al2o3/ingaas Gate Stack after Post Metallization Annealing

Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H–SiC

Effects of Annealing Process on Characteristics of Fully Transparent Zinc Tin Oxide Thin-Film Transistor

Fermi Pinning-Induced Thermal Instability of Metal-Gate Work Functions

Effect of post-deposition annealing on charge distribution of metal-oxide-semiconductor capacitor with TiN/HfO2/SiO2/Si gate structure

Effect of annealing on interfacial and band alignment characteristics of HfO 2/SiO 2 gate stacks on Ge substrates

Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics

Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

Significant Threshold Voltage Lowering Induced by Contact Silicidation Annealing of FinFET