Study of hafnium defects in silicon dioxide using density functional theory
Diana Denice,A. Arya,Manoj Kumar,Gopika Vinod
DOI: https://doi.org/10.1016/j.mssp.2024.108202
IF: 4.1
2024-02-10
Materials Science in Semiconductor Processing
Abstract:Defect properties of four types of hafnium defects in SiO 2 , viz , silicon substitution by hafnium (Hf Si ), oxygen substitution by hafnium (Hf O ), hafnium interstitial (Hf i ) and oxygen vacancy in the vicinity of hafnium ( V O Hf) have been studied within the framework of density functional theory (DFT) using HSE06 functional, to understand their role in bias temperature instability (BTI). The calculated formation energies predict that Hf i (+4 charge) is the most stable defect in n-type MOS (NMOS) transistor followed by Hf Si (0), V O Hf in (+4) and Hf O (+2) defects, whereas, in p-type MOS (PMOS), it is Hf Si (0) followed by Hf i (+4), V O Hf (0) and Hf O (+1). Hence, the defects more likely to be formed in SiO 2 are Hf Si in both PMOS, NMOS and Hf i , V O Hf in the NMOS transistor. Our charge transition levels (CTL) calculations show that the V O Hf defect complex is likely to have a higher capture rate for electrons than Hf i and cause PBTI. However, Hf Si defect will not trap any hole or electron and remains neutral during BTI conditions.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied