Abstract:Intentional oxidation of an As2-decapped (100) In0.57Ga0.43As substrate by additional H2O dosing during initial Al2O3 gate dielectric atomic layer deposition (ALD) increases the interface trap density (Dit), lowers the band edge photoluminescence (PL) intensity, and generates Ga-oxide detected by X-ray photoelectron spectroscopy (XPS). Aberration-corrected high resolution transmission electron microscopy (TEM) reveals formation of an amorphous interfacial layer which is distinct from the Al2O3 dielectric and which is not present without the additional H2O dosing. Observation of a temperature dependent border trap response, associated with the frequency dispersion of the accumulation capacitance and conductance of metal-oxide-semiconductor (MOS) structures, is found to be correlated with the presence of this defective interfacial layer. MOS capacitors prepared with additional H2O dosing show a notable decrease (∼20%) of accumulation dispersion over 5 kHz to 500 kHz when the measurement temperature decreases from room temperature to 77 K, while capacitors prepared with an abrupt Al2O3/InGaAs interface display little change (<2%) with temperature. Similar temperature-dependent border trap response is also observed when the (100) InGaAs surface is treated with a previously reported HCl(aq) wet cleaning procedure prior to Al2O3 ALD. These results point out the sensitivity of the temperature dependence of the border trap response in metal oxide/III-V MOS gate stacks to the presence of processing-induced interface oxide layers, which alter the dynamics of carrier trapping at defects that are not located at the semiconductor interface.

Mechanisms and models of interface trap annealing in positively-biased MOS devices

Studies of defect states in the interface between SiO2 and a-Si:H films

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

New Insights into the Interface Trap Generation during Hot Carrier Degradation: Impacts of Full-band Electronic Resonance, (100) vs (110), and nMOS vs pMOS

Atomic origin of high temperature electron trapping in MOS devices

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects

(Invited) Border Trap Density in Al2O3/InGaAs MOS: Dependence on Hydrogen Passivation and Bias Temperature Stress

Insight into the suppression mechanism of bulk traps in Al2O3 gate dielectric and its effect on threshold voltage instability in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

Bias Temperature Stress Induced Hydrogen Depassivation from Al2O3/InGaAs Interface Defects

Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO$_2$/4H-SiC MOSFETs

Effect of Temperature-Dependent Low Oxygen Partial Pressure Annealing on SiC MOS

Effects of Annealing Temperature on Bias Temperature Stress Stabilities of Bottom-Gate Coplanar In-Ga-Zn-O Thin-Film Transistors

Low temperature atomic hydrogen annealing of InGaAs MOSFETs

Temperature Dependent Border Trap Response Produced by a Defective Interfacial Oxide Layer in Al2O3/InGaAs Gate Stacks.

Interface degradation in Si‐metal‐oxide‐semiconductor structures by homogeneous, microwave heating of channel carriers

Hot Carrier Injection Reliability in Nanoscale Field Effect Transistors: Modeling and Simulation Methods

Low Temperature Characterization and Modeling of Hot Carrier Injection in 14 Nm Si FinFET

Negative bias temperature instability of HfN/HfO2 gated p-MOSFETs

Relaxation kinetics of interface states and bulk traps in atomic layer deposited ZrO2/ β -Ga2O3 metal-oxide-semiconductor capacitors