Abstract:In this work, the reliability of different oxide/4H-SiC interfaces under high temperature and carrier-trapping conditions are investigated carefully. In more detail, the carrier-trapping and temperature effects are considered in the electrical characterization of a low breakdown 4H-SiC-based MOSFET by using in turn SiO2, Si3N4, AlN, Al2O3, Y2O3 and HfO2 as gate dielectric. A gate oxide with a high relative permittivity notably improves the transistor performance. In addition, HfO2 assures the MOSFET best immunity behaviors. The obtained results are explained in terms of the carrier channel mobility, device on-state resistance, and oxide electric field. By using HfO2, however, an increased gate leakage current is calculated. This drawback is overcome by inserting a thin interfacial layer (2 nm-thick) in the HfO2/4H-SiC MOS structure. In particular, two alternative gate stacked dielectrics, involving either SiO2 or Al2O3, have proven their effectiveness in preserving the transistor on-state figures of merit while limiting the gate leakage current in the whole explored gate voltage range. To support the prediction capabilities of the presented modeling analysis, the simulations results are compared with experimental data from literature resulting in a good agreement. Low power MOSFETs are used in several applications for which reliability and durability are as critical as performance. For example, referring to power optimizers for photovoltaic (PV) modules, which fall under the low-load and low-voltage category of DC–DC converters, these devices significantly increase the energy generated by each single PV module operating under harsh conditions and stressing environments. In addition, they have to ensure high reliability over the long term of operation.

Atomic origin of high temperature electron trapping in MOS devices

Mechanisms and models of interface trap annealing in positively-biased MOS devices

Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

Threshold voltage instability of SiC MOSFETs under very‐high temperature and wide gate bias

Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO$_2$/4H-SiC MOSFETs

Exploring High-Temperature Reliability of 4H-SiC MOSFETs: A Comparative Study of High-K Gate Dielectric Materials

Oxide Reliability of SiC MOS Devices

Nanoscale insights on the origin of the Power MOSFETs breakdown after extremely long high temperature reverse bias stress

High Temperature Stability and the Performance Degradation of SiC MOSFETs

Si/SiO$_\text{2}$ MOSFET Reliability Physics: From Four-State Model to All-State Model

Si/SiO_2 MOSFET Reliability Physics: from Four-State Model to All-State Model

Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

Deep Understanding of Negative Gate Voltage Restriction for SiC mosfet Under Wide Temperature Range

Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions

Atomistic Mechanism of 4 H - Si C / Si O 2 Interface Carrier-Trapping Effects on Breakdown-Voltage Degradation in Power Devices

High temperature stability evaluation of SiC MOSFETs

Mechanisms of negative bias instability of commercial SiC MOSFET observed by current transients

Anomalous Dynamic Performance in Heterogeneous Ga2O3-on-SiC MOSFETs Fabricated Using Ion-Implantation Cutting Process

Negative bias temperature instability of HfN/HfO2 gated p-MOSFETs

The Low Threshold-Voltage Shift with Temperature and Small Subthreshold-Slope in 28 Nm UTBB FDSOI for 300 °C High-Temperature Application

GaSb P-Channel Metal-Oxide-semiconductor Field-Effect Transistor and Its Temperature Dependent Characteristics