Abstract:The $\mathrm{Si}\mathrm{C}/{\mathrm{Si}\mathrm{O}}_{2}$ interface in the termination area is a crucial component in limiting high-temperature reverse-bias (HTRB) reliability for $\mathrm{Si}\mathrm{C}$-based high-voltage devices. However, the atomic structure and carrier-trapping behavior of the $\mathrm{Si}\mathrm{C}/{\mathrm{Si}\mathrm{O}}_{2}$ interface defects therein and the underlying physical mechanisms of breakdown-voltage (${V}_{\mathrm{BD}}$) variation are still largely unclear. Here, the $\mathrm{Si}\mathrm{C}/{\mathrm{Si}\mathrm{O}}_{2}$ interface defects of 4H-$\mathrm{Si}\mathrm{C}$ gate turn-off (GTO) thyristors before and after HTRB stress are investigated by transient capacitance measurements and density-functional-theory (DFT) calculations. It is found that the bias stress at 4.4 kV enlarges the interface state density at ${E}_{C}\ensuremath{-}0.60$ eV to ${E}_{C}\ensuremath{-}1.33$ eV by electron capturing. As a result, the negative interface charge is generated. As high-resolution transmission electron microscopy reveals the presence of excess carbon near the $\mathrm{Si}\mathrm{C}$ surface, DFT calculations are focused on carbon-related interface defects to clarify the atomic and electronic structures of the $\mathrm{Si}\mathrm{C}/{\mathrm{Si}\mathrm{O}}_{2}$ interface trap and assign them to negatively charged excess split-interstitial carbon at the interface. Furthermore, technical computer-aided-design simulation further proves that the negatively charged $\mathrm{Si}\mathrm{C}/{\mathrm{Si}\mathrm{O}}_{2}$ interface defect is the main cause for the observed ${V}_{\mathrm{BD}}$ degradation after the HTRB test, which leads to a strong electric ﬁeld crowding effect. These results not only provide deep physical insights underlying ${V}_{\mathrm{BD}}$ degradation in HTRB-stressed high-voltage devices, but are also of significant importance in the optimizations of device structure and oxidation technology for $\mathrm{Si}\mathrm{C}/{\mathrm{Si}\mathrm{O}}_{2}$ interfaces in high-voltage $\mathrm{Si}\mathrm{C}$ devices.

Atomistic Mechanism of 4 H - Si C / Si O 2 Interface Carrier-Trapping Effects on Breakdown-Voltage Degradation in Power Devices

Atomistic Mechanism of 4 H - SiC/SiO2 Interface Carrier-Trapping Effects on Breakdown-Voltage Degradation in Power Devices

Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs

4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Impact of Process on Gate Leakage Current and Time-Dependent Dielectric Breakdown Failure Mechanisms of 4H-SiC MOS Capacitors

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Gate Oxide Reliability in Silicon Carbide Planar and Trench Metal-Oxide-Semiconductor Field-Effect Transistors Under Positive and Negative Electric Field Stress

Simulation Studies on Single-Event Effects and the Mechanisms of SiC VDMOS from a Structural Perspective

Design and Characterization of Area-Efficient Trench Termination for 4H-SiC Devices

High-temperature time-dependent dielectric breakdown of 4H-SiC MOS capacitors

Carrier injection induced degradation of nitrogen passivated SiC–SiO2 interface simulated by time-dependent density functional theory

12.5 Kv SiC Gate Turn off Thyristor with Trench-Modulated JTE Structure

Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions

Nanoscale insights on the origin of the Power MOSFETs breakdown after extremely long high temperature reverse bias stress

Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations

Over dV/dt Robustness of Switching Behavior of SiC MOSFET and a Novel Main Junction Region Design

Investigation on gate oxide reliability under gate bias screening for commercial SiC planar and trench MOSFETs

Heavy-ion induced gate damage and thermal destruction in double-trench SiC MOSFETs

Investigations on the Degradation of 1.2-Kv 4H-Sic Mosfets under Repetitive Short-Circuit Tests