Abstract:In this article, we delve into the reliability of various oxide/4H-SiC interfaces when exposed to elevated temperatures and carrier-trapping conditions. Our investigation primarily centers around the impact of different gate dielectric materials on the electrical characteristics of a low breakdown 4H-SiC-based MOSFET. The gate dielectrics under scrutiny include SiO2, Si3N4, AlN, Al2O3, Y2O3, and HfO2. We find that the choice of gate oxide material significantly influences the transistor's performance, with gate oxides possessing higher relative permittivity notably enhancing its characteristics. Among the materials studied, HfO2 emerges as the most promising candidate, demonstrating superior immunity behaviors in the MOSFET. However, the use of HfO2 is associated with increased gate leakage current. To mitigate this drawback, we introduce a thin interfacial layer (2 nm-thick) in the HfO2/4H-SiC MOS structure. Interestingly, two alternative gate stacked dielectrics, involving either SiO2 or Al2O3, prove effective in preserving the transistor's on-state performance metrics while limiting gate leakage current across the entire range of gate voltages examined. To validate the predictive capabilities of our modeling analysis, we compare our simulation results with experimental data from the literature, and we observe a favorable agreement. This research holds particular significance in applications employing low-power MOSFETs, where reliability and durability are as critical as performance. For instance, in the context of power optimizers for photovoltaic modules, which fall under the category of low-load and low-voltage DC–DC converters, these devices play a pivotal role in enhancing energy generation under challenging environmental conditions while ensuring long-term reliability.

Si/SiO$_\text{2}$ MOSFET Reliability Physics: From Four-State Model to All-State Model

Si/SiO_2 MOSFET Reliability Physics: from Four-State Model to All-State Model

Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs

Reliability Improvements in SOI-like MOSFET with ESD and Self-Heating Effect

Deep Understanding of Oxide Defects for Stochastic Charging in Nanoscale MOSFETs

Compact Modeling of MOSFET Wearout Mechanisms for Circuit-Reliability Simulation

Oxide Breakdown Reliability of SiC MOSFET

Modeling Of Nbti Stress Induced Hole-Trapping And Interface-State-Generation Mechanisms Under A Wide Range Of Bias Conditions

Compact Negative Bias Temperature Instability Model for Silicon Nanowire MOSFET (SNWT) and Application in Circuit Performance Simulation

Simulation of Threshold Voltage Instability of 4H-Sic MOSFET

Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices

Modeling of the Influence on Effective $\textit{v}_{\text{th}}$ from Interface States, Short Channel Effects, and Contact Resistance in SiC MOSFETs

The Understanding and Compact Modeling of Reliability in Modern Metal–Oxide–Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode Mechanisms

Compact reliability model for degradation of advanced p-MOSFETs due to NBTI and hot-carrier effects in the circuit simulation

A New Model for Two-Dimensional Electrical-Field-Dependent $v_{\rm Th}$ Instability of Pmosfets with Ultrathin DPN Gate Dielectrics

Establishment of Degradation Model and Transfer Model for P-channel Power MOSFETs under Negative Bias Temperature Stress

Characterization of Negative-Bias Temperature Instability of Ge MOSFETs with ${\rm GeO}_{2}/{\rm Al}_{2}{\rm O}_{3}$ Stack

Statistical aspects of reliability in bulk MOSFETs with multiple defect states and random discrete dopants

Mechanism of negative bias temperature instability for PMOSFET's with thin gate oxide

A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs

Exploring High-Temperature Reliability of 4H-SiC MOSFETs: A Comparative Study of High-K Gate Dielectric Materials