Abstract:As implemented in the commercialized device modeling software, the four-state nonradiative multi-phonon model has attracted intensive attention in the past decade for describing the physics in negative bias temperature instability (NBTI) and other reliability issues of Si/SiO$_\text{2}$ MOSFET devices. It was proposed initially based on the assumption that the oxygen vacancy defects (V$_\text{O}$) in SiO$_\text{2}$ dielectric layer are bistable in the Si-dimer and back-projected structures during carrier capture and emission. Through high-throughput first-principles structural search, we found V$_\text{O}$ on non-equivalent O sites in amorphous SiO$_\text{2}$ can take 4 types of structural configurations in neutral state and 7 types of configurations in +1 charged state after capturing holes, which produce a wide range of charge-state transition levels for trapping holes. The finding contrasts the structural-bistability assumption and makes the four-state model invalid for most of O sites. To describe the reliability physics accurately, we propose an all-state model to consider all these structural configurations as well as all the carrier capture/emission transitions and thermal transitions between them. With the all-state model, we show that the V$_\text{O}$ defects play important roles in causing NBTI, which challenges the recent studies that discarded V$_\text{O}$ as a possible hole trap in NBTI. Our systematical calculations on the diversified V$_\text{O}$ properties and the all-state model provide the microscopic foundation for describing the reliability physics of MOSFETs and other transistors accurately.

Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices

Numerical Study of Flicker Noise in p-Type <formula formulatype="inline"><tex>$ \hbox{Si}_{0.7}\hbox{Ge}_{0.3}/\hbox{Si}$</tex> </formula> Heterostructure MOSFETs

Evaluation of MOS Interface Trap Generation after BTI Stress Using Flicker Noise

Deep Understanding of Oxide Defects for Stochastic Charging in Nanoscale MOSFETs

Interface traps, correlated mobility fluctuations, and low-frequency noise in metal–oxide–semiconductor transistors

Si/SiO$_\text{2}$ MOSFET Reliability Physics: From Four-State Model to All-State Model

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS 2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Si/SiO_2 MOSFET Reliability Physics: from Four-State Model to All-State Model

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Hole Capture-Structural Relaxation Mechanism of Defect Generation in Ionizing-irradiated $a$-SiO$_2$

Hole-traps in Silicon Dioxides. Part II. Generation Mechanism

A Vacancy-Interstitial Defect Pair Model for Positive-Bias Temperature Stress-Induced Electron Trapping Transformation in the High- $\kappa $ Gate n-MOSFET

New Insights into the Interface Trap Generation during Hot Carrier Degradation: Impacts of Full-band Electronic Resonance, (100) vs (110), and nMOS vs pMOS

Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO$_2$/4H-SiC MOSFETs

Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis

Field-assisted Thermally Stimulated Current of Mobile Ions in a Dielectric Layer of a Metal–oxide–semiconductor Structure

Gate tunneling currents in ultrathin oxide metal–oxide–silicon transistors

Simulation of Statistical Aspects of Charge Trapping and Related Degradation in Bulk Mosfets in the Presence of Random Discrete Dopants

Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs

Modeling On Direct Tunneling Current In Ultra-Thin Oxide Nmosfet Considering Quantum Mechanics

A New Model for Two-Dimensional Electrical-Field-Dependent $v_{\rm Th}$ Instability of Pmosfets with Ultrathin DPN Gate Dielectrics