Abstract:This paper studies the effect of drain bias on ultra-short p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) degradation during negative bias temperature (NBT) stress. When a relatively large gate voltage is applied, the degradation magnitude is much more than the drain voltage which is the same as the gate voltage supplied, and the time exponent gets larger than that of the NBT instability (NBTI). With decreasing drain voltage, the degradation magnitude and the time exponent all get smaller. At some values of the drain voltage, the degradation magnitude is even smaller than that of NBTI, and when the drain voltage gets small enough, the exhibition of degradation becomes very similar to the NBTI degradation. When a relatively large drain voltage is applied, with decreasing gate voltage, the degradation magnitude gets smaller. However, the time exponent becomes larger. With the help of electric field simulation, this paper concludes that the degradation magnitude is determined by the vertical electric field of the oxide, the amount of hot holes generated by the strong channel lateral electric field at the gate/drain overlap region, and the time exponent is mainly controlled by localized damage caused by the lateral electric field of the oxide in the gate/drain overlap region where hot carriers are produced.

Establishment of Degradation Model and Transfer Model for P-channel Power MOSFETs under Negative Bias Temperature Stress

The Threshold Voltage Degradation Model of N Channel VDMOSFETs under PBT Stress

A Modelling Method of the On-State Resistance of P-Channel Power MOSFETs under NBTI Stress

Negative Bias Temperature Instability (NBTI) in Deep Sub-Micron P/sup +/-Gate Pmosfets

Modeling of Degradation Caused by Channel Hot Carrier and Negative Bias Temperature Instability Effects in P-Mosfets

Negative Bias Temperature Instability Characteristics and Degradation Mechanisms of Pmosfet with High-K/Metal Gate Stacks

Models and Related Mechanisms of NBTI Degradation of 90nm Pmosfets

Study on the Drain Bias Effect on Negative Bias Temperature Instability Degradation of an Ultra-Short P-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Bias Temperature Instability of MOSFETs: Physical Processes, Models, and Prediction

Electrical Performances Degradations and Physics Based Mechanisms under Negative Bias Temperature Instability Stress for P-Gan Gate High Electron Mobility Transistors

Mechanism of negative bias temperature instability for PMOSFET's with thin gate oxide

Dependence of the Dc Stress Negative Bias Temperature Instability Effect on Basic Device Parameters in Pmosfet

Gate Length Dependence of Bias Temperature Instability Behavior in Short Channel SOI MOSFETs

Modeling Of Nbti Stress Induced Hole-Trapping And Interface-State-Generation Mechanisms Under A Wide Range Of Bias Conditions

Degradation Characteristics and Mechanism of PMOSFETs under NBT-PBT-NBT Stress

Compact reliability model for degradation of advanced p-MOSFETs due to NBTI and hot-carrier effects in the circuit simulation

Experimental insights on the degradation and recovery of pMOSFET under non-uniform NBTI stresses

Factors for Negative Bias Temperature Instability Improvement in Deep Sub-Micron CMOS Technology

Investigation of Degradation and Recovery Characteristics of NBTI in 28-Nm High-K Metal Gate Process

Negative-Bias Temperature Instability in Gate-All-Around Silicon Nanowire Mosfets: Characteristic Modeling and the Impact on Circuit Aging

Consistent Model of NBTI with Low Drain Voltage in P-MOSFETs