Abstract:Our recent investigations and understanding of the negative bias temperature instability (NBTI) degradation in p-MOSFETs with ultrathin SiON gate dielectric are reviewed. The progressive understanding of NBTI mechanism is mainly related to the novel measurement techniques we developed. We show in this paper the following: 1) For the conventional charge pumping and direct-current current-voltage interface trap measurement, the interface trap density Nit is underestimated due to the recovery during measurement delay. The existing Nit data should be reexamined; 2) an ultrafast pulsed I-V method [fast pulsed measurement (FPM)] is developed to measure DeltaVth with measurement time tM = 100 ns. It can be considered as free from recovery during measurement; 3) due to the degradation during the initial threshold voltage measurement, the existing slow on-the-fly (OTF) DeltaVth measurement distorts (overestimates) the slope and induces a kink at early stress time in the Log-Log curve of the time evolution of NBTI degradation. A fast OTF DeltaVth measurement method is developed to overcome this problem; 4) a novel OTF interface trap (OFIT) measurement method is developed which is free from interface trap recovery during measurement. The OFIT measurement provides the most reliable data to inspect the interface trap R-D model; 5) combining the OFIT and FPM measurements, we decompose the NBTI DeltaVth into two components: A slow DeltaVth it component contributed by with a slow recovery time longer than 50mus and a fast DeltaVth ox component contributed by DeltaVox with a broad spectrum of recovery time, including a component with very fast recovery time (100 ns); and 6) the dynamic degradation by DeltaVth it component is frequency-independent and can be measured by a dc method, whereas the dynamic degradation DeltaVth ox by component measured by FPM is increased by increasing frequency. The ten-year lifetime of the p-MOSFETs is mainly determined by the degradation of the DeltaVth it component.

Investigation of Degradation and Recovery Characteristics of NBTI in 28-Nm High-K Metal Gate Process

Negative Bias Temperature Instability Characteristics and Degradation Mechanisms of Pmosfet with High-K/Metal Gate Stacks

Characterization of positive bias temperature instability of NMOSFET with high-k/metal gate last process

Negative Bias Temperature Instability (NBTI) in Deep Sub-Micron P/sup +/-Gate Pmosfets

Detailed study of NBTI characterization in 40-nm CMOS process using comprehensive models

Understand NBTI Mechanism by Developing Novel Measurement Techniques

Influence of Ultra-Thin Tin Thickness (1.4 Nm and 2.4 Nm) on Positive Bias Temperature Instability (pbti) of High-K/Metal Gate Nmosfets with Gate-Last Process

Mechanism of Nbti Degradation in Ultra Deep Submicron Pmosfet'S

The Study on NBTI Mechanism and Its Effect on P + Gate PMOSFET

Evaluation of negative bias temperature instability in ultra-thin gate oxide pMOSFETs using a new on-line PDO method

Studies of NBTI in Pmosfets with Thermal and Plasma Nitrided SiON Gate Oxides by OFIT and FPM Methods

CMOS NBTI Degradation and Recovery Behaviors in a Wide Temperature Range

Electrical Performances Degradations and Physics Based Mechanisms under Negative Bias Temperature Instability Stress for P-Gan Gate High Electron Mobility Transistors

Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET

PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

Degradation Characteristics and Mechanism of PMOSFETs under NBT-PBT-NBT Stress

Study on the Drain Bias Effect on Negative Bias Temperature Instability Degradation of an Ultra-Short P-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Modeling Of Nbti Stress Induced Hole-Trapping And Interface-State-Generation Mechanisms Under A Wide Range Of Bias Conditions

Establishment of Degradation Model and Transfer Model for P-channel Power MOSFETs under Negative Bias Temperature Stress

Models and Related Mechanisms of NBTI Degradation of 90nm Pmosfets

Positive Bias Temperature Instability Degradation of InGaAs N-Mosfets with Al2O3 Gate Dielectric