Abstract:As traditional CMOS is gradually approaching the limit of the bulk technology scaling, non-classical CMOS devices such as UTB-SOI, DG-MOSFET and MG structure provide a path to scale CMOS to the end of the Roadmap using new transistor structural designs. Compact modeling of such non-classical MOSFET devices calls for a fundamentally different approach from the conventional bulk CMOS because of the different device physics picture and unique physical effects in the new topology of the non-classical CMOS devices. This paper outlines the carrier-based approach: A generous strategy to develop the compact model of non-classical MOSFETs. It is shown that the carrier-based analytic models of UTB-SOI, DG and SRG MOSFETs can be developed in terms of the induced carrier concentration rather than the traditional surface potential or the charge variable. Based on an exact solution of the Poisson equation in various non-classical structures coupled to the Pao-Sah current formulation in terms of the carrier concentration, the different dependences of the surface potential, centric potential, inversion charge and the current on the silicon body thickness and the gate oxide are elucidated analytically and then the predicted IV characteristics are compared with the 2-D and 3-D numerical simulations. The analytical results of the model presented show in a good agreement with the numerical simulation, demonstrating the model is valid for all operation regions and traces the transition between them without any auxiliary variable and function

A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs

A carrier-based analytic model for undoped Ultra-Thin-Body Silicon-on-insulator (UTB-SOI)MOSFETS

A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator ( UTB-SOI ) MOSFETs

A Rigorous Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-On-Insulator (Utb-Soi) Mosfets

A continuous analytic <i>I</i>–<i>V</i> model for long-channel undoped ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs from a carrier-based approach

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A Carrier-Based Analytic Model for the Undoped Symmetric Double-Gate MOSFETs

A Carrier-Based Approach for Compact Modeling of the Long-Channel Undoped Symmetric Double-Gate MOSFETs

A Unified Carrier-Based Model for Undoped Symmetric Double-Gate and Surrounding-Gate Mosfets

An Exact Analytic Model of Undoped Body MOSFETs using the SPP Approach

A Complete Carrier-Based Non-Charge-Sheet Analytic Model for Nano-Scale Undoped Symmetric Double-Gate MOSFETs

Carrier-Based Approach: A Generous Strategy to Develop Compact Model of Non-Classical CMOS

A Unified Charge-Based Model for SOI MOSFETs Applicable from Intrinsic to Heavily Doped Channel

A carrier-based analytic DCIV model for long channel undoped cylindrical surrounding-gate MOSFETs

A unified charge-based model for SOI MOSFETs valid from intrinsic to heavily doped channel

A Physics Based Analytical Model Of Undoped Body Mosfets

Extended Version of Carrier-Based Analytical Model to Account for the Doped Effect of Symmetric Double-Gate MOSFETs

A Complete Carrier-Based Non-Charge-Sheet Analytic Theory for Nano-Scale Undoped Surrounding-Gate MOSFETs

An Explicit Current–voltage Model for Undoped Double-Gate MOSFETs Based on Accurate Yet Analytic Approximation to the Carrier Concentration

An approximate carrier-based compact model for fully depleted surrounding-gate MOSFETs with a finite doping body

A Coupled Circuit-Ambipolar Diffusion Equation Model and Its Solution Methodology for Insulated Gate Bipolar Transistors