Abstract:This article presents an enhanced physical SPICE model for insulated gate bipolar transistor (IGBT) modules, grounded in a two-dimensional charge distribution. The model accurately delineates the lateral charge distribution under both static conduction and transient conditions, providing a precise representation of the PNP and PIN components of the IGBT. The improved model more effectively describes current distribution and clarifies parasitic effects, such as latch-up phenomenon. Furthermore, a negative carrier lifetime near the gate is introduced in accordance with the carrier movement direction, resulting in a catenary charge distribution in the PIN segment of the IGBT. This aligns closely with the technology computer-aided design (TCAD) results. Notably, the carrier concentration in the N-base region significantly escalates under high-level injection conditions. The model incorporates an N+N- junction and a P+N- junction within the channel to portray the carrier concentration variation during the transient state, also factoring in the effect of temperature on the IGBT characteristics. Implemented in PSPICE, the model's findings are compared with TCAD outcomes and experimental data. These comparisons illustrate that the proposed model precisely delivers the charge distribution, as well as dynamic/static characteristics and unbalanced current in parallel devices of the IGBT.

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